New Chemistries and Applications in Molecular Layer Deposition

New Chemistries and Applications in Molecular Layer Deposition

Author: Richard Gene Closser

Publisher:

Published: 2019

Total Pages:

ISBN-13:

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Recent advancements in nanotechnologies have highlighted the need for thin film deposition capabilities that allow for fine thickness and compositional control. One technique that could help meet these needs is molecular layer deposition (MLD). MLD is a vapor-to-surface organic deposition method that utilizes sequential, self-limiting surface reactions, whereby thin film polymers can be grown. Since its inception, there has been significant progress in MLD synthesis capability, but certain challenges remain. Due to its vapor-phase nature, MLD is unable to utilize solvents and catalysts available to solution phase chemistry. This constraint has limited the variety of polymers that can be grown by MLD, including those formed by carbon-carbon bond synthesis. Another challenge for MLD is to enable area selective (AS) deposition, a process of significant interest in the semiconductor industry because of its potential to reduce fabrication processing steps and facilitate the scale-down of device feature sizes. The first portion of this work discusses a technique allowing for enhanced selectivity in AS-MLD. To achieve these highly selective depositions, a self-assembled monolayer (SAM) layer is used to act as a resist towards MLD. A chemical lift-off step is also employed, which is shown to significantly increase the overall selectivity of the AS-MLD process. Next, a new method for MLD of a silicon oxycarbide (SiOC) material is introduced. SiOC films are typically made with highly oxidizing reactants at elevated temperatures, causing film degradation during the deposition. The new MLD process, however, utilizes mild reactants at room temperature, thereby eliminating degradation problems, resulting in well defined SiOC films. The SiOC films crosslink during the deposition forming a robust film with exceptional thermal stability. The films show a low dielectric (k) constant, supporting their potential use in semiconductor devices where thermally resistant coatings with low-k properties are needed. Lastly, the development of a new MLD polymer is introduced. By utilizing UV light for radical polymerization, direct formation of carbon-carbon bonds is enabled in a photoactivated MLD (pMLD) synthesis. An alternating hydrocarbon-fluorocarbon copolymer, grown via pMLD using iodo-ene coupling, polymerizes by new carbon-carbon bond formation. The fluoropolymer exhibits high thermal stability and chemical resistance as well as the ability to be patterned using a photomask. The pMLD film also shows the ability to be used as a resist for selective deposition. The continued development of thin film techniques such as MLD is essential for progress to be made in nanoscale technologies and could have significant impact towards increasing energy efficiency, providing clean air and water, and improving healthcare. The focus of this work, therefore, is to advance the capabilities of MLD, allowing for new materials and applications.


Organometallic Chemistry

Organometallic Chemistry

Author: Nathan J Patmore

Publisher: Royal Society of Chemistry

Published: 2018-11-16

Total Pages: 210

ISBN-13: 1788010671

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With the increase in volume, velocity and variety of information, researchers can find it difficult to keep up to date with the literature in their field. Providing an invaluable resource, this volume contains analysed, evaluated and distilled information on the latest in organometallic chemistry research and emerging fields. The reviews range in scope and include π-coordinated arene metal complexes and catalysis by arene exchange, rylenes as chromophores in catalysts for CO2 photoreduction, metal nodes and metal sites in metal–organic frameworks, developments in molecular precursors for CVD and ALD, and multiphoton luminescence processes in f-element containing compounds.


Precursor Chemistry of Advanced Materials

Precursor Chemistry of Advanced Materials

Author: Roland A. Fischer

Publisher: Springer Science & Business Media

Published: 2005-09-29

Total Pages: 240

ISBN-13: 9783540016052

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Material synthesis by the transformation of organometallic compounds (precursors) by vapor deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) has been in the forefront of modern day research and development of new materials. There exists a need for new routes for designing and synthesizing new precursors as well as the application of established molecular precursors to derive tuneable materials for technological demands. With regard to the precursor chemistry, a most detailed understanding of the mechanistic complexity of materials formation from molecular precursors is very important for further development of new processes and advanced materials. To emphasize and stimulate research in these areas, this volume comprises a selection of case studies covering various key-aspects of the interplay of precursor chemistry with the process conditions of materials formation, particularly looking at the similarities and differences of CVD, ALD and nanoparticle synthesis, e.g. colloid chemistry, involving tailored molecular precursors.


Atomic Layer Deposition

Atomic Layer Deposition

Author: Tommi Kääriäinen

Publisher: John Wiley & Sons

Published: 2013-05-28

Total Pages: 274

ISBN-13: 1118062779

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Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.


Molecular Layer Deposition

Molecular Layer Deposition

Author: David S. Bergsman

Publisher:

Published: 2018

Total Pages:

ISBN-13:

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In recent years, many technological advancements in medicine, renewable energy, water purification, and semiconductor processing have resulted from access to nanotechnology. Though we have many methods for creating nano-sized features, our current nanomaterials toolkit must continue to expand in order to meet the increasing demand for smaller features, more complex architectures, and reduced defect frequencies required by these applications. Molecular layer deposition (MLD) is a promising new method for expanding that toolkit, allowing for the incorporation of organic components into ultrathin materials and nanostructures through a vapor-phase, layer-by-layer synthesis approach. Although a decade and a half of development has already gone into MLD, there is still a significant gap in our understanding of the mechanisms behind MLD growth and the microscopic properties of the resulting films, such as their molecular-level structure. This dissertation presents work to better understand these fundamental properties of MLD and use that understanding to control the thermal, mechanical, and catalytic properties of these materials. In the first half of this work, a study of the structure and growth behavior of organic MLD films is performed. First, the properties of polyurea films are explored as a function of backbone flexibility. Our results suggest that changes in growth rate between the most rigid and most flexible backbones (4 Å/cycle vs 1 Å/cycle) are not caused by differences in the length of molecular precursors, chain orientation (~25° on average for each backbone), or film density (1.0 -- 1.2 g/cm3), but instead are caused by an increased frequency of terminations in the more flexible chemistries. Measurement of the crystallinity and growth angle further suggest that polyurea MLD films exhibit multiple domains, with some chains adopting horizontally packed structures and some chains growing more out-of-plane, leading to an average growth angle of 25°. Interestingly, the observed terminations do not result in the complete cessation of film growth, suggesting that precursors may be absorbing into the film through non-covalent linkages. To observe these absorptions events, MLD is performed on surfaces whose reaction sites have been intentionally eliminated. These terminations are shown to be effective at reducing the growth rate of MLD, suggesting that MLD growth rates are heavily dependent on the number of reaction sites. However, after several cycles, the film growth rate is able to recover, suggesting that monomers have absorbed into the films to reintroduce new reaction sites. A model of growth is developed based on a site balance which suggests that roughly 3% of the chains are terminated by double reactions every cycle. Taken as a whole, this work provides a new paradigm for the growth of MLD films, showing that the films do not adopt the simple layer-by-layer covalent network that is typically portrayed for MLD. MLD has many potential applications in energy and semiconductor manufacturing. In the second half of this thesis, two studies related to the development of MLD are explored. First, a relatively unstudied "manganicone" manganese hybrid MLD chemistry is synthesized using bis(ethylcyclopentadienyl)manganese and ethylene glycol for use as an electrochemically-relevant catalyst material. Characterization of the composition and crystal structure of these films shows them to grow as manganese alkoxides, which partially degrade upon exposure to air into manganese carboxylates. Annealing the hybrid films to remove the carbon is shown to eliminate any porosity introduced through the incorporation of the organic components. However, annealed hybrid films are shown to be less prone to restructuring than ALD-grown MnOx, making them potentially desirable materials for electrodes in thin film batteries. Second, an investigation of the self-assembly of dodecanethiols from the vapor phase onto copper oxide was performed. Dodecanethiols are often used as a blocking layer in area-selective ALD and MLD. The thiols are shown to etch the surface of the CuO to create well-ordered copper-thiolate multilayers several nanometers thick, with crystallites oriented parallel and perpendicular to the substrate surface. In addition, after exposure to air for several days, the multilayer films ripen into particles several microns wide and several hundred nanometers high over the course of several days. This ripening has never before been observed for thiols deposited on copper or copper oxide Finally, a conclusion is presented with several perspectives on the possible use of MLD in the future.


Chemical Vapour Deposition

Chemical Vapour Deposition

Author: Anthony C Jones

Publisher: Royal Society of Chemistry

Published: 2008-12-17

Total Pages: 599

ISBN-13: 1847558798

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Chemical Vapour Deposition (CVD) involves the deposition of thin solid films from chemical precursors in the vapour phase, and encompasses a variety of deposition techniques, including a range of thermal processes, plasma enhanced CVD (PECVD), photon- initiated CVD, and atomic layer deposition (ALD). The development of CVD technology owes a great deal to collaboration between different scientific disciplines such as chemistry, physics, materials science, engineering and microelectronics, and the publication of this book will promote and stimulate continued dialogue between scientists from these different research areas. The book is one of the most comprehensive overviews ever written on the key aspects of chemical vapour deposition processes and it is more comprehensive, technically detailed and up-to-date than other books on CVD. The contributing authors are all practising CVD technologists and are leading international experts in the field of CVD. It presents a logical and progressive overview of the various aspects of CVD processes. Basic concepts, such as the various types of CVD processes, the design of CVD reactors, reaction modelling and CVD precursor chemistry are covered in the first few chapters. Then follows a detailed description of the use of a variety CVD techniques to deposit a wide range of materials, including semiconductors, metals, metal oxides and nitrides, protective coatings and functional coatings on glass. Finally and uniquely, for a technical volume, industrial and commercial aspects of CVD are also discussed together with possible future trends, which is an unusual, but very important aspect of the book. The book has been written with CVD practitioners in mind, such as the chemist who wishes to learn more about CVD processes, or the CVD technologist who wishes to gain an increased knowledge of precursor chemistry. The volume will prove particularly useful to those who have recently entered the field, and it will also make a valuable contribution to chemistry and materials science lecture courses at undergraduate and postgraduate level.


Atomic Layer Deposition for Semiconductors

Atomic Layer Deposition for Semiconductors

Author: Cheol Seong Hwang

Publisher: Springer Science & Business Media

Published: 2013-10-18

Total Pages: 266

ISBN-13: 146148054X

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Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.


Atomic Layer Deposition (ALD)

Atomic Layer Deposition (ALD)

Author: Callisto Joan MacIsaac

Publisher:

Published: 2018

Total Pages:

ISBN-13:

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Modern society demands smaller, more precise devices for both microelectronic and energy technologies. The development of methods and processes that can deposit reliably uniform, conformal thin films on the nanoscale is essential to fields as diverse as catalysts and solar cells. Therefore, atomic layer deposition (ALD), a thin-film deposition technique that accomplishes these goals by using self-limiting sequential reactions between alternating precursors to achieve atomic precision over the product film, is an important tool for the modern era. Combining ALD with molecular layer deposition (MLD), which follows the same principles as ALD but deposits entire organic molecules to build films, results in a powerful system that enables the deposition of inorganic, organic, and hybrid inorganic-organic materials. Understanding the nucleation mechanisms, surface reaction chemistry, and applications of these materials and ALD/MLD processes is essential to commercialization and wider use. Through in situ Fourier transform infrared (FTIR) spectroscopy, we studied the zinc-tin-oxide (ZTO) system, a ternary ALD process that is a combination of the zinc oxide and tin oxide binary ALD processes. Previous research had indicated that the ternary system is characterized by non-idealities in the ALD growth, and we identify as a potential cause of these effects incomplete removal of the ligands from the tetrakis(dimethylamino)tin precursor, which leads to a nucleation delay when depositing ZnO on SnO2. A significant fraction of the ligands remain on the surface during the ALD of SnO2 and endure when the process is switched to ZnO ALD. This result suggests that the occupation of surface reactive sites by these persisting ligands may be the cause of the observed nucleation delay with potential ramifications for many other binary and ternary systems where persisting ligands may be present. In addition, we studied the mechanism of ALD-grown MoS2 thin films. It was observed by atomic force microscopy (AFM), grazing incidence small angle X-ray scattering (GISAXS), and X-ray reflectivity (XRR) that nucleation proceeds by the formation of small islands that coalesce into a complete film in under 100 cycles, with further film growth failing to occur after coalescence. This inertness is attributed to the chemical inactivity of the basal planes of MoS2. It was found that the final thickness of the as-grown film is not determined by the number of ALD cycles as per the normal regime, but by the temperature that the film is deposited at. This self-limiting layer synthesis (SLS) has been reported in the literature for higher temperature depositions of MoS2, but this is the first report of the effect in a low temperature, amorphous MoS2 ALD system. The thickness of films growth by ALD with the precursors Mo(CO)6 and H2S was found to saturate at around 7 nm on both native oxide-covered silicon and bulk crystalline MoS2 substrates, which may indicate that the SLS behavior is inherent to the ALD process and not substantially a product of the substrate surface potential. Finally, we demonstrated a new ALD/MLD hybrid process that used the MoS2 ALD precursor Mo(CO)6 and the counter reagent 1,2-ethanedithiol to create a MoS2-like material with organic domains. This Mo-thiolate possesses many properties that link it to MoS2, such as activity towards the hydrogen evolution reaction (HER) and similar Raman modes, but has a significantly lower density, optical transparency, and higher geometric surface area. It was found that the process has a 1.3 Å growth per cycle and can catalyze the HER reaction at an overpotential of 294 mV at -10 mA/cm2 , which is superior to planar MoS2 and ranks the as-deposited catalyst with the best nanostructured MoS2-based catalysts. We propose that this activity comes from the higher surface area induced by the incorporation of organic chains into the films. In summary, we explored the mechanisms and nucleation behavior of several ALD systems of interest to energy applications using both in situ and ex situ analysis techniques. These studies demonstrated the importance of understanding ALD surface chemistry to the overall chemical composition of the resultant films, the ramifications of different nucleation regimes in determining morphologies, and the power of ALD/MLD in creating analogues to previously known species with improved physical properties.


Atomic Layer Deposition of Nanostructured Materials

Atomic Layer Deposition of Nanostructured Materials

Author: Nicola Pinna

Publisher: John Wiley & Sons

Published: 2012-09-19

Total Pages: 472

ISBN-13: 3527639934

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Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.