Women in Microelectronics

Women in Microelectronics

Author: Alice Cline Parker

Publisher: Springer Nature

Published: 2020-07-16

Total Pages: 270

ISBN-13: 303046377X

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This book contains stories of women engineers’ paths through the golden age of microelectronics, stemming from the invention of the transistor in 1947. These stories, like the biographies of Marie Curie and the National Geographic’s stories of Jane Goodall’s research that inspired the authors will inspire and guide readers along unconventional pathways to contributions to microelectronics that we can only begin to imagine. The book explores why and how the women writing here chose their career paths and how they navigated their careers. This topic is of interest to a vast audience, from students to professionals to university advisers to industry CEOs, who can imagine the advantages of a future with a diverse work force. Provides insight into women’s early contributions to the field of microelectronics and celebrates the challenges they overcame; Presents compelling innovations from academia, research, and industry into advances, applications, and the future of microelectronics; Includes a fascinating look into topics such as nanotechnologies, video games, analog electronics, design automation, and neuromorphic circuits.


Characterization and Modeling of Indium Gallium Phosphide/gallium Arsenide HBT for Pulsed RF Power Application

Characterization and Modeling of Indium Gallium Phosphide/gallium Arsenide HBT for Pulsed RF Power Application

Author: Subrata Halder

Publisher:

Published: 2006

Total Pages: 71

ISBN-13: 9781109856828

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Further, an improved physical model for base push-out effect based on a high field mobility model of GaAs has been established which included velocity modulation effect and non uniform electron concentration profile. Critical electric field profile in the collector is compared with a device simulation results and impact of temperature and base-collector voltage on Kirk effect discussed. A large signal compact model implementing these expressions could predict both isothermal and the dynamic behavior of a 2x20 um2 device accurately in the high collector voltage high collector current region.