Compound Semiconductors 2002
Compound Semiconductors 2002

Author: Marc Ilegems

Publisher: CRC Press

Published: 2003-09-01

Total Pages: 502

ISBN-13: 9780750309424

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A major showcase for the compound semiconductor community, Compound Semiconductors 2002 presents an overview of recent developments in compound semiconductor physics and its technological applications to devices. The topics discussed reflect the significant progress achieved in understanding and mastering compound semiconductor materials and electronic and optoelectronic devices. The book covers heteroepitaxial growth, quantum confined emitters and detectors, quantum wires and dots, ultrafast transistors, and various compound materials.

Compound Semiconductors 2004
Compound Semiconductors 2004

Author: J.C. Woo

Publisher: CRC Press

Published: 2005-04-01

Total Pages: 531

ISBN-13: 1482269228

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Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for t

Physics of Semiconductors 2002
Physics of Semiconductors 2002

Author: J.H Davies

Publisher: CRC Press

Published: 2003-05-01

Total Pages: 330

ISBN-13: 9780750309240

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The 26th International Conference on the Physics of Semiconductors was held from 29 July to 2 August 2002 at the Edinburgh International Conference Centre. It is the premier meeting in the field of semiconductor physics and attracted over 1000 participants from leading academic, governmental and industrial institutions in some 50 countries around the world. Plenary and invited papers (34) have been printed in the paper volume, and all submitted papers (742) are included on the CD-ROM. These proceedings provide an international perspective on the latest research and a review of recent developments in semiconductor physics. Topics range from growth and properties of bulk semiconductors to the optical and transport properties of semiconductor nanostructures. There are 742 papers, mostly arranged in chapters on Bulk, dynamics, defects and impurities, growth (147); Heterostructures, quantum wells, superlattices - optical (138); Heterostructures, quantum wells, superlattices - transport (97); Quantum nanostructures - optical (120); Quantum nanostructures - transport (85); New materials and concepts (52); Novel devices (43); and Spin and magnetic effects (48). A number of trends were identified in setting up the overall programme of the conference. There were significant contributions from new directions of research such as nanostructures and one-dimensional physics; spin effects and ferromagnetism; and terahertz and subband physics. These complemented areas in which the conference has traditional strengths, such as defects and bulk materials; crystal growth; quantum transport; and optical properties. As a record of a conference that covers the whole range of semiconductor physics, this book is an essential reference for researchers working on semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.

Compound Semiconductors 2001
Compound Semiconductors 2001

Author: Y Arakawa

Publisher: CRC Press

Published: 2002-09-30

Total Pages: 855

ISBN-13: 9780750308564

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An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical devices, magnetic materials, novel systems, quantum transport, optical characterization, quantum nanostructures, and material growth and characterization. The content encompasses the development of optical and electronic devices based on nitride semiconductors as well as the steady advances in traditional topics like III-V-based electronic and optical devices, growth and processing, and characterization. The book also includes novel research trends in quantum structures, such as quantum wires and dots, and spintronics, which are very promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications, this resource is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.

Compound Semiconductor Integrated Circuits
Compound Semiconductor Integrated Circuits

Author: Tho T. Vu

Publisher: World Scientific

Published: 2003-01-01

Total Pages: 366

ISBN-13: 9789812796844

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This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies. Contents: Present and Future of High-Speed Compound Semiconductor IC''s (T Otsuji); The Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.

III-V Compound Semiconductors
III-V Compound Semiconductors

Author: Tingkai Li

Publisher: CRC Press

Published: 2016-04-19

Total Pages: 588

ISBN-13: 1439815232

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Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more

UWB
UWB

Author: Ian Oppermann

Publisher: John Wiley & Sons

Published: 2004-10-15

Total Pages: 252

ISBN-13: 9780470869178

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Over the past 20 years UWB has been used for radar, sensing, military communications and niche applications. However, since the FCC ruling in 2002, which allowed the commercial operation of UWB for data communications, UWB has changed dramatically. Implementation oriented, this volume explores the fundamentals of UWB technology with particular emphasis on impulse radio (IR) techniques. It explains the key physical layer aspects of UWB technology, especially in communications and in control applications, and examines the multiple access (MAC) issues which are emerging as a hot area for practical UWB systems. Offers practical information about implementation Addresses issues of modulation possibilities, appropriate circuits for UWB, an example circuit design, MAC protocol issues and use of UWB for positioning applications Includes a literature survey examining books, articles and conference papers presenting the basic features of UWB technology and current systems Features a patent database search providing a historical perspective to the state-of-the-art technology UWB Theory and Applications will be indispensable to researchers interested in the practical issues of UWB technology and realistic assumptions of UWB, as well as engineers interested in implementing UWB devices.

State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2
State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2

Author: C. O'Dwyer

Publisher: The Electrochemical Society

Published: 2007

Total Pages: 647

ISBN-13: 1566775515

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Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.