Compound Semiconductor Power Transistors II and
Author: R. F. Kopf
Publisher: The Electrochemical Society
Published: 2000
Total Pages: 368
ISBN-13: 9781566772662
DOWNLOAD EBOOKRead and Download eBook Full
Author: R. F. Kopf
Publisher: The Electrochemical Society
Published: 2000
Total Pages: 368
ISBN-13: 9781566772662
DOWNLOAD EBOOKAuthor: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
Published: 1998
Total Pages: 338
ISBN-13: 9781566772228
DOWNLOAD EBOOKAuthor: Allan H Johnston
Publisher: World Scientific
Published: 2010-04-27
Total Pages: 376
ISBN-13: 9814467650
DOWNLOAD EBOOKThis book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Author: Tho T. Vu
Publisher: World Scientific
Published: 2003
Total Pages: 363
ISBN-13: 9812383115
DOWNLOAD EBOOKThis is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji); Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.
Author: Athanasios Dimoulas
Publisher: Springer Science & Business Media
Published: 2008-01-01
Total Pages: 397
ISBN-13: 354071491X
DOWNLOAD EBOOKThis book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Author:
Publisher:
Published: 2000
Total Pages: 354
ISBN-13:
DOWNLOAD EBOOKAuthor: Alex Lidow
Publisher: John Wiley & Sons
Published: 2019-08-23
Total Pages: 388
ISBN-13: 1119594375
DOWNLOAD EBOOKAn up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Author: D. Nirmal
Publisher: CRC Press
Published: 2019-05-14
Total Pages: 434
ISBN-13: 0429862520
DOWNLOAD EBOOKThis book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Saad Asif
Publisher: CRC Press
Published: 2018-07-20
Total Pages: 336
ISBN-13: 0429881355
DOWNLOAD EBOOKThis book will help readers comprehend technical and policy elements of telecommunication particularly in the context of 5G. It first presents an overview of the current research and standardization practices and lays down the global frequency spectrum allocation process. It further lists solutions to accommodate 5G spectrum requirements. The readers will find a considerable amount of information on 4G (LTE-Advanced), LTE-Advance Pro, 5G NR (New Radio); transport network technologies, 5G NGC (Next Generation Core), OSS (Operations Support Systems), network deployment and end-to-end 5G network architecture. Some details on multiple network elements (end products) such as 5G base station/small cells and the role of semiconductors in telecommunication are also provided. Keeping trends in mind, service delivery mechanisms along with state-of-the-art services such as MFS (mobile financial services), mHealth (mobile health) and IoT (Internet-of-Things) are covered at length. At the end, telecom sector’s burning challenges and best practices are explained which may be looked into for today’s and tomorrow’s networks. The book concludes with certain high level suggestions for the growth of telecommunication, particularly on the importance of basic research, departure from ten-year evolution cycle and having a 20–30 year plan. Explains the conceivable six phases of mobile telecommunication’s ecosystem that includes R&D, standardization, product/network/device & application development, and burning challenges and best practices Provides an overview of research and standardization on 5G Discusses solutions to address 5G spectrum requirements while describing the global frequency spectrum allocation process Presents various case studies and policies Provides details on multiple network elements and the role of semiconductors in telecommunication Presents service delivery mechanisms with special focus on IoT