Novel Forms of Carbon II: Volume 349
Novel Forms of Carbon II: Volume 349

Author: C. L. Renschler

Publisher:

Published: 1994-11-21

Total Pages: 584

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Semiconductor Heteroepitaxy: Growth Characterization And Device Applications
Semiconductor Heteroepitaxy: Growth Characterization And Device Applications

Author: B Gil

Publisher: World Scientific

Published: 1995-12-15

Total Pages: 714

ISBN-13: 9814548421

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This book develops the mathematics of differential geometry in a way more intelligible to physicists and other scientists interested in this field. This book is basically divided into 3 levels; level 0, the nearest to intuition and geometrical experience, is a short summary of the theory of curves and surfaces; level 1 repeats, comments and develops upon the traditional methods of tensor algebra analysis and level 2 is an introduction to the language of modern differential geometry. A final chapter (chapter IV) is devoted to fibre bundles and their applications to physics. Exercises are provided to amplify the text material.

Compound Semiconductor Bulk Materials And Characterizations, Volume 2
Compound Semiconductor Bulk Materials And Characterizations, Volume 2

Author: Osamu Oda

Publisher: World Scientific

Published: 2012-10-31

Total Pages: 409

ISBN-13: 9814449199

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This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic devices.

Silicon Molecular Beam Epitaxy
Silicon Molecular Beam Epitaxy

Author: E. Kasper

Publisher: CRC Press

Published: 2018-05-04

Total Pages: 411

ISBN-13: 1351093525

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This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Microstructure of Irradiated Materials: Volume 373
Microstructure of Irradiated Materials: Volume 373

Author: Ian M. Robertson

Publisher:

Published: 1995-04-03

Total Pages: 600

ISBN-13:

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The focus of the symposium, which was held at the 1994 MRS Fall Meeting, was on the changes produced in the microstructure of metals, ceramics, and semiconductors by irradiation with energetic particles. This proceedings volume contains invited and contributed papers. Among the topics are computer simulation of displacement cascade damage in metals; radiation effects in ceramic insulators; and computer simulation of thermal annealing effects of self implanted silicon. Annotation copyright by Book News, Inc., Portland, OR