Characterization of Wide Bandgap Power Semiconductor Devices
Characterization of Wide Bandgap Power Semiconductor Devices

Author: Fei Wang

Publisher: Institution of Engineering and Technology

Published: 2018-09-05

Total Pages: 348

ISBN-13: 1785614916

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At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.

Characterization of Wide Bandgap Power Semiconductor Devices
Characterization of Wide Bandgap Power Semiconductor Devices

Author: Fei (Fred) Wang

Publisher:

Published: 2018

Total Pages: 333

ISBN-13: 9781523119349

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This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors.

Wide Bandgap Semiconductor Power Devices
Wide Bandgap Semiconductor Power Devices

Author: B. Jayant Baliga

Publisher: Woodhead Publishing

Published: 2018-10-17

Total Pages: 420

ISBN-13: 0081023073

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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Wide Energy Bandgap Electronic Devices
Wide Energy Bandgap Electronic Devices

Author: Fan Ren

Publisher: World Scientific

Published: 2003

Total Pages: 526

ISBN-13: 9812382461

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Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.

Wide Bandgap Semiconductor-based Electronics
Wide Bandgap Semiconductor-based Electronics

Author: Fan Ren

Publisher:

Published: 2020

Total Pages: 0

ISBN-13: 9780750325165

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"Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas." -- Prové de l'editor.

Harsh Environment Electronics
Harsh Environment Electronics

Author: Ahmed Sharif

Publisher: John Wiley & Sons

Published: 2019-08-05

Total Pages: 398

ISBN-13: 3527344195

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Provides in-depth knowledge on novel materials that make electronics work under high-temperature and high-pressure conditions This book reviews the state of the art in research and development of lead-free interconnect materials for electronic packaging technology. It identifies the technical barriers to the development and manufacture of high-temperature interconnect materials to investigate into the complexities introduced by harsh conditions. It teaches the techniques adopted and the possible alternatives of interconnect materials to cope with the impacts of extreme temperatures for implementing at industrial scale. The book also examines the application of nanomaterials, current trends within the topic area, and the potential environmental impacts of material usage. Written by world-renowned experts from academia and industry, Harsh Environment Electronics: Interconnect Materials and Performance Assessment covers interconnect materials based on silver, gold, and zinc alloys as well as advanced approaches utilizing polymers and nanomaterials in the first section. The second part is devoted to the performance assessment of the different interconnect materials and their respective environmental impact. -Takes a scientific approach to analyzing and addressing the issues related to interconnect materials involved in high temperature electronics -Reviews all relevant materials used in interconnect technology as well as alternative approaches otherwise neglected in other literature -Highlights emergent research and theoretical concepts in the implementation of different materials in soldering and die-attach applications -Covers wide-bandgap semiconductor device technologies for high temperature and harsh environment applications, transient liquid phase bonding, glass frit based die attach solution for harsh environment, and more -A pivotal reference for professionals, engineers, students, and researchers Harsh Environment Electronics: Interconnect Materials and Performance Assessment is aimed at materials scientists, electrical engineers, and semiconductor physicists, and treats this specialized topic with breadth and depth.

Gallium Oxide
Gallium Oxide

Author: Stephen Pearton

Publisher: Elsevier

Published: 2018-10-15

Total Pages: 510

ISBN-13: 0128145226

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Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. - Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing - Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more - Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact

SiC Power Module Design
SiC Power Module Design

Author: Alberto Castellazzi

Publisher: IET

Published: 2021-12-09

Total Pages: 359

ISBN-13: 1785619071

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Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes.

Semiconductor Material and Device Characterization
Semiconductor Material and Device Characterization

Author: Dieter K. Schroder

Publisher: John Wiley & Sons

Published: 2015-06-29

Total Pages: 800

ISBN-13: 0471739065

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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Topics in Growth and Device Processing of III-V Semiconductors
Topics in Growth and Device Processing of III-V Semiconductors

Author: S. J. Pearton

Publisher: World Scientific

Published: 1996

Total Pages: 568

ISBN-13: 9789810218843

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This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.