Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Author:

Publisher: Academic Press

Published: 1997-06-12

Total Pages: 335

ISBN-13: 0080864430

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Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Ion Implantation in Microelectronics
Ion Implantation in Microelectronics

Author: A. H. Agajanian

Publisher: Springer

Published: 1981-09-30

Total Pages: 282

ISBN-13:

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During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index. The volumes and numbers of the abstracts are given to pro vide access to the abstracts.

Ion Implantation: Equipment and Techniques
Ion Implantation: Equipment and Techniques

Author: H. Ryssel

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 564

ISBN-13: 3642691560

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The Fourth International Conference on Ion Implantation: Equipment and Tech niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.