ERDA Energy Research Abstracts
Author: United States. Energy Research and Development Administration
Publisher:
Published: 1977
Total Pages: 994
ISBN-13:
DOWNLOAD EBOOKRead and Download eBook Full
Author: United States. Energy Research and Development Administration
Publisher:
Published: 1977
Total Pages: 994
ISBN-13:
DOWNLOAD EBOOKAuthor: United States. Energy Research and Development Administration. Technical Information Center
Publisher:
Published: 1977
Total Pages: 982
ISBN-13:
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Publisher:
Published: 1994
Total Pages: 836
ISBN-13:
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Publisher:
Published: 1978
Total Pages: 412
ISBN-13:
DOWNLOAD EBOOKAuthor: A. H. Agajanian
Publisher: Springer
Published: 1981-09-30
Total Pages: 282
ISBN-13:
DOWNLOAD EBOOKDuring the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index. The volumes and numbers of the abstracts are given to pro vide access to the abstracts.
Author:
Publisher:
Published: 1993
Total Pages: 654
ISBN-13:
DOWNLOAD EBOOKAuthor: United States. Energy Research and Development Administration
Publisher:
Published: 1977-08
Total Pages: 768
ISBN-13:
DOWNLOAD EBOOKAuthor: E. Kasper
Publisher: CRC Press
Published: 2018-05-04
Total Pages: 411
ISBN-13: 1351093525
DOWNLOAD EBOOKThis subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: Blum
Publisher: CRC Press
Published: 2019-08-28
Total Pages: 374
ISBN-13: 1000715671
DOWNLOAD EBOOKConsiders a new generation of sensors for use in industrial processes, which measure the chemical environment directly by means of a biological agent mainly enzymes so far. Various specialists from Europe, the US, and Japan identify the device's place in their disciplines; review the principles of m
Author: Leonard C. Feldman
Publisher: Academic Press
Published: 2012-12-02
Total Pages: 321
ISBN-13: 0323139817
DOWNLOAD EBOOKOur intention has been to write a book that would be useful to people with a variety of levels of interest in this subject. Clearly it should be useful to both graduate students and workers in the field. We have attempted to bring together many of the concepts used in channeling beam analysis with an indication of the origin of the ideas within fundamental channeling theory. The level of the book is appropriate to senior under-graduates and graduate students who have had a modern physics course work in related areas of materials science and wish to learn more about the "channeling" probe, its strengths, weaknesses, and areas of further potential application. To them we hope we have explained this apparent paradox of using mega-electron volt ions to probe solid state phenomena that have characteristic energies of electron volts.