Structural Analysis of Point Defects in Solids
Structural Analysis of Point Defects in Solids

Author: Johann-Martin Spaeth

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 376

ISBN-13: 3642844057

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Strutural Analysis of Point Defects in Solids introduces the principles and techniques of modern electron paramagnetic resonance (EPR) spectroscopy essentialfor applications to the determination of microscopic defect structures. Investigations of the microscopic and electronic structure, and also correlations with the magnetic propertiesof solids, require various multiple magnetic resonance methods, such as ENDOR and optically detected EPR or ENDOR. This book discusses experimental, technological and theoretical aspects of these techniques comprehensively, from a practical viewpoint, with many illustrative examples taken from semiconductors and other solids. The nonspecialist is informed about the potential of the different methods, while the researcher faced with the task of determining defect structures isprovided with the necessary tools, together with much information on computer-aided methods of data analysis and the principles of modern spectrometer design.

Uncertainty Quantification of Stochastic Defects in Materials
Uncertainty Quantification of Stochastic Defects in Materials

Author: Liu Chu

Publisher: CRC Press

Published: 2021-12-16

Total Pages: 179

ISBN-13: 1000506096

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Uncertainty Quantification of Stochastic Defects in Materials investigates the uncertainty quantification methods for stochastic defects in material microstructures. It provides effective supplementary approaches for conventional experimental observation with the consideration of stochastic factors and uncertainty propagation. Pursuing a comprehensive numerical analytical system, this book establishes a fundamental framework for this topic, while emphasizing the importance of stochastic and uncertainty quantification analysis and the significant influence of microstructure defects on the material macro properties. Key Features Consists of two parts: one exploring methods and theories and the other detailing related examples Defines stochastic defects in materials and presents the uncertainty quantification for defect location, size, geometrical configuration, and instability Introduces general Monte Carlo methods, polynomial chaos expansion, stochastic finite element methods, and machine learning methods Provides a variety of examples to support the introduced methods and theories Applicable to MATLAB® and ANSYS software This book is intended for advanced students interested in material defect quantification methods and material reliability assessment, researchers investigating artificial material microstructure optimization, and engineers working on defect influence analysis and nondestructive defect testing.

Defects and Impurities in Silicon Materials
Defects and Impurities in Silicon Materials

Author: Yutaka Yoshida

Publisher: Springer

Published: 2016-03-30

Total Pages: 498

ISBN-13: 4431558004

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This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

Defects in Two-Dimensional Materials
Defects in Two-Dimensional Materials

Author: Rafik Addou

Publisher: Elsevier

Published: 2022-02-14

Total Pages: 434

ISBN-13: 032390310X

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Defects in Two-Dimensional Materials addresses the fundamental physics and chemistry of defects in 2D materials and their effects on physical, electrical and optical properties. The book explores 2D materials such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMD). This knowledge will enable scientists and engineers to tune 2D materials properties to meet specific application requirements. The book reviews the techniques to characterize 2D material defects and compares the defects present in the various 2D materials (e.g. graphene, h-BN, TMDs, phosphorene, silicene, etc.). As two-dimensional materials research and development is a fast-growing field that could lead to many industrial applications, the primary objective of this book is to review, discuss and present opportunities in controlling defects in these materials to improve device performance in general or use the defects in a controlled way for novel applications. Presents the theory, physics and chemistry of 2D materials Catalogues defects of 2D materials and their impacts on materials properties and performance Reviews methods to characterize, control and engineer defects in 2D materials

Characterization of Crystal Growth Defects by X-Ray Methods
Characterization of Crystal Growth Defects by X-Ray Methods

Author: B.K. Tanner

Publisher: Springer Science & Business Media

Published: 2013-04-17

Total Pages: 615

ISBN-13: 1475711263

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This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.

Characterisation and Control of Defects in Semiconductors
Characterisation and Control of Defects in Semiconductors

Author: Filip Tuomisto

Publisher: Institution of Engineering and Technology

Published: 2019-10-21

Total Pages: 601

ISBN-13: 1785616552

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Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties. Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, cheaper, lower power, and new kinds of electronics generates an ongoing need for new materials and properties, and so creates new defect-related challenges.

Materials Characterization Using Nondestructive Evaluation (NDE) Methods
Materials Characterization Using Nondestructive Evaluation (NDE) Methods

Author: Gerhard Huebschen

Publisher: Woodhead Publishing

Published: 2016-03-23

Total Pages: 322

ISBN-13: 008100057X

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Materials Characterization Using Nondestructive Evaluation (NDE) Methods discusses NDT methods and how they are highly desirable for both long-term monitoring and short-term assessment of materials, providing crucial early warning that the fatigue life of a material has elapsed, thus helping to prevent service failures. Materials Characterization Using Nondestructive Evaluation (NDE) Methods gives an overview of established and new NDT techniques for the characterization of materials, with a focus on materials used in the automotive, aerospace, power plants, and infrastructure construction industries. Each chapter focuses on a different NDT technique and indicates the potential of the method by selected examples of applications. Methods covered include scanning and transmission electron microscopy, X-ray microtomography and diffraction, ultrasonic, electromagnetic, microwave, and hybrid techniques. The authors review both the determination of microstructure properties, including phase content and grain size, and the determination of mechanical properties, such as hardness, toughness, yield strength, texture, and residual stress. - Gives an overview of established and new NDT techniques, including scanning and transmission electron microscopy, X-ray microtomography and diffraction, ultrasonic, electromagnetic, microwave, and hybrid techniques - Reviews the determination of microstructural and mechanical properties - Focuses on materials used in the automotive, aerospace, power plants, and infrastructure construction industries - Serves as a highly desirable resource for both long-term monitoring and short-term assessment of materials

Synthesis, Modelling and Characterization of 2D Materials and their Heterostructures
Synthesis, Modelling and Characterization of 2D Materials and their Heterostructures

Author: Eui-Hyeok Yang

Publisher: Elsevier

Published: 2020-06-19

Total Pages: 502

ISBN-13: 0128184760

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Synthesis, Modelling and Characterization of 2D Materials and Their Heterostructures provides a detailed discussion on the multiscale computational approach surrounding atomic, molecular and atomic-informed continuum models. In addition to a detailed theoretical description, this book provides example problems, sample code/script, and a discussion on how theoretical analysis provides insight into optimal experimental design. Furthermore, the book addresses the growth mechanism of these 2D materials, the formation of defects, and different lattice mismatch and interlayer interactions. Sections cover direct band gap, Raman scattering, extraordinary strong light matter interaction, layer dependent photoluminescence, and other physical properties. - Explains multiscale computational techniques, from atomic to continuum scale, covering different time and length scales - Provides fundamental theoretical insights, example problems, sample code and exercise problems - Outlines major characterization and synthesis methods for different types of 2D materials

Defects in Semiconductors
Defects in Semiconductors

Author:

Publisher: Academic Press

Published: 2015-06-08

Total Pages: 458

ISBN-13: 0128019409

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This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors