Atomic Diffusion in III-V Semiconductors
Atomic Diffusion in III-V Semiconductors

Author: Brian Tuck

Publisher: CRC Press

Published: 2021-05-31

Total Pages: 252

ISBN-13: 1000447960

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III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.

Atomic Diffusion in Semiconductors
Atomic Diffusion in Semiconductors

Author: D. Shaw

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 615

ISBN-13: 1461586364

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The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.

Atomic Diffusion in III-V Semiconductors
Atomic Diffusion in III-V Semiconductors

Author: Brian Tuck

Publisher: CRC Press

Published: 2021-05-30

Total Pages: 245

ISBN-13: 1000445232

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III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.

Springer Handbook of Electronic and Photonic Materials
Springer Handbook of Electronic and Photonic Materials

Author: Safa Kasap

Publisher: Springer

Published: 2017-10-04

Total Pages: 1536

ISBN-13: 331948933X

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The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.

Diffusion Processes in Advanced Technological Materials
Diffusion Processes in Advanced Technological Materials

Author: Devendra Gupta

Publisher: Springer Science & Business Media

Published: 2013-01-15

Total Pages: 552

ISBN-13: 9780080947082

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This new game book for understanding atoms at play aims to document diffusion processes and various other properties operative in advanced technological materials. Diffusion in functional organic chemicals, polymers, granular materials, complex oxides, metallic glasses, and quasi-crystals among other advanced materials is a highly interactive and synergic phenomenon. A large variety of atomic arrangements are possible. Each arrangement affects the performance of these advanced, polycrystalline multiphase materials used in photonics, MEMS, electronics, and other applications of current and developing interest. This book is written by pioneers in industry and academia for engineers, chemists, and physicists in industry and academia at the forefront of today's challenges in nanotechnology, surface science, materials science, and semiconductors.

Ion Exchange in Single Crystals for Integrated Optics and Optoelectronics
Ion Exchange in Single Crystals for Integrated Optics and Optoelectronics

Author: Yu N. Korkishko

Publisher: Cambridge Int Science Publishing

Published: 1999

Total Pages: 531

ISBN-13: 189832641X

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The book addresses many problems of ion exchange processes in LiNbO3, LiTaO3 and KTiOPO4 ferroelectrics and II-VI semiconductor single crystals for integrated optics applications. The authors start with the fundamentals of ion exchange processes in solids (Chapter 1). Chapter 1 can be considered also as an enlarged introduction to the book. Starting with Chapter 2, the general properties of LiNbO3 and LiTaO3 crystals, the methods used to study optical waveguides in these crystals as well as advanced preparation methods of optical waveguides are reviewed. Chapters 3, 4 and 5 are devoted to recent progress in the ion exchange processes in LiNbO3, LiTaO3 and KTiOPO4 crystals, respectively, and Chapter 6 summarizes the main applications of ion-exchanged waveguides in modern integrated optics. Finally, Chapter 7 deals with recently established ion exchange processes in II-VI semiconductors.

Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference
Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

Author: J Pollman

Publisher: World Scientific

Published: 1994-06-09

Total Pages: 818

ISBN-13: 9814552399

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Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.

Atomic Layer Deposition for Semiconductors
Atomic Layer Deposition for Semiconductors

Author: Cheol Seong Hwang

Publisher: Springer Science & Business Media

Published: 2013-10-18

Total Pages: 266

ISBN-13: 146148054X

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Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Diffusion in Solids
Diffusion in Solids

Author: Helmut Mehrer

Publisher: Springer Science & Business Media

Published: 2007-07-24

Total Pages: 645

ISBN-13: 354071488X

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This book describes the central aspects of diffusion in solids, and goes on to provide easy access to important information about diffusion in metals, alloys, semiconductors, ion-conducting materials, glasses and nanomaterials. Coverage includes diffusion-controlled phenomena including ionic conduction, grain-boundary and dislocation pipe diffusion. This book will benefit graduate students in such disciplines as solid-state physics, physical metallurgy, materials science, and geophysics, as well as scientists in academic and industrial research laboratories.