Antimonide-Related Strained-Layer Heterostructures
Antimonide-Related Strained-Layer Heterostructures

Author: M. O. Manasreh

Publisher: CRC Press

Published: 2019-08-16

Total Pages: 526

ISBN-13: 1000725308

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Interest in antimonide-related heterostructures is burgeoning due to their applications as light sources, diode lasers, modulators, filters, switches, nonlinear optics, and field-defect transistors. This volume, featuring contributions from leading researchers in the field, is the first book to focus on antimonide-related topics. It offers to both the beginning student and the advanced researcher a comprehensive review of the state of the art in this exciting new area of research.

Strained-Layer Quantum Wells and Their Applications
Strained-Layer Quantum Wells and Their Applications

Author: M. O. Manasreh

Publisher: CRC Press

Published: 1997-12-23

Total Pages: 606

ISBN-13: 9789056995676

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Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.

InP and Related Compounds
InP and Related Compounds

Author: M O Manasreh

Publisher: CRC Press

Published: 2000-08-08

Total Pages: 870

ISBN-13: 9789056992644

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InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.

GaN and Related Materials II
GaN and Related Materials II

Author: Stephen J. Pearton

Publisher: CRC Press

Published: 2000-10-31

Total Pages: 718

ISBN-13: 1482298147

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The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microw

GaN and Related Materials
GaN and Related Materials

Author: Stephen J. Pearton

Publisher: CRC Press

Published: 1997-10-29

Total Pages: 556

ISBN-13: 9789056995171

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Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

High Performance Devices - Proceedings Of The 2004 Ieee Lester Eastman Conference
High Performance Devices - Proceedings Of The 2004 Ieee Lester Eastman Conference

Author: Robert Leoni

Publisher: World Scientific

Published: 2005-04-26

Total Pages: 314

ISBN-13: 9814480800

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This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.

III-V Nitride Semiconductors
III-V Nitride Semiconductors

Author: Edward T. Yu

Publisher: CRC Press

Published: 2022-10-30

Total Pages: 718

ISBN-13: 1000723771

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The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.

Microprobe Characterization of Optoelectronic Materials
Microprobe Characterization of Optoelectronic Materials

Author: Juan Jimenez

Publisher: CRC Press

Published: 2024-11-01

Total Pages: 731

ISBN-13: 1040283829

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Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal growers and optoelectronic device makers.

Silicon Carbide
Silicon Carbide

Author: Chuan Feng Zhe

Publisher: CRC Press

Published: 2003-10-30

Total Pages: 412

ISBN-13: 1591690234

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This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.