Good quality single crystals are the backbone of emerging technological world. There is a growing need to improve growth and characterization techniques and to grow high performance crystals for application purposes, Post growth treatments can enhance the
Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers. The book begins with "Growth Histories of Mineral Crystals" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.
This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
This book presents recent advances and trends in photonic crystal technology, making it a useful resource for students, researchers, and faculty in the field. It consists of five chapters that present in-depth knowledge of numerical methods and different applications of photonic crystal technology. The chapters discuss photonic crystals for energy, sensing, and digital devices. They also examine advanced applications of photonic crystals, like holography and photonic spin hall effect. Each chapter presents a detailed background on the considered application, recent work in the area, possible solutions to challenges, and future aspects.
In this book, academic researchers and technologists will find important information on the interaction of polymeric and non-polymeric inhibitors with a variety of scale forming crystals such as calcium phosphates, calcium carbonate, calcium oxalates, barium sulfate, calcium pyrophosphates, and calcium phosphonates. Moreover, the book delivers information to plant managers and formulators who would like to broaden and deepen their knowledge about processes involved in precipitation of sparingly soluble salts and learn more about the inhibitory aspects of various commercially available materials. Furthermore, experienced researchers will obtain fruitful and inspiring ideas from the easily accessible information about overlapping research areas, which will promote discoveries of new inhibitors (synthetic and/or natural) for the currently unmet challenges.
This book summarizes and records the recent notable advances in diverse topics in organic crystal chemistry, which has made substantial progress along with the rapid development of a variety of analysis and measurement techniques for solid organic materials. This review book is one of the volumes that are published periodically on this theme. The previous volume, published in 2015, systematically summarized the remarkable progress in assorted topics of organic crystal chemistry using organic solids and organic–inorganic hybrid materials during the previous 5 years, and it has been widely read. The present volume also shows the progress of organic solid chemistry in the last 5 years, with contributions mainly by invited members of the Division of Organic Crystal Chemistry of the Chemical Society of Japan (CSJ), together with prominent invited authors from countries other than Japan.
The book contains 5 chapters with 19 contributions form internationally well acknowledged experts in various fields of crystal growth. The topics are ranging from fundamentals (thermodynamic of epitaxy growth, kinetics, morphology, modeling) to new crystal materials (carbon nanocrystals and nanotubes, biological crystals), to technology (Silicon Czochralski growth, oxide growth, III-IV epitaxy) and characterization (point defects, X-ray imaging, in-situ STM). It covers the treatment of bulk growth as well as epitaxy by anorganic and organic materials.