Topics in Electron Diffraction and Microscopy of Materials celebrates the retirement of Professor Michael Whelan from the University of Oxford. Professor Whelan taught many of today's heads of department and was a pioneer in the development and use of electron microscopy. His collaborators and colleagues, each one of whom has made important advances in the use of microscopy to study materials, have contributed to this cohesive work. The book provides a useful overview of current applications for selected electron microscope techniques that have become important and widespread in their use for furthering our understanding of how materials behave. Linked through the dynamical theory of electron diffraction and inelastic scattering, the topics discussed include the history and impact of electron microscopy in materials science, weak-beam techniques for problem solving, defect structures and dislocation interactions, using beam diffraction patterns to look at defects in structures, obtaining chemical identification at atomic resolution, theoretical developments in backscattering channeling patterns, new ways to look at atomic bonds, using numerical simulations to look at electronic structure of crystals, RHEED observations for MBE growth, and atomic level imaging applications.
Electron Microscopy in Material Science covers the proceedings of the International School of Electron Microscopy held in Erice, Itsaly, in 1970. The said conference is intended to the developments of electron optics and electron microscopy and its applications in material science. The book is divided into four parts. Part I discusses the impact of electron microscopy in the science of materials. Part II covers topics such as electron optics and instrumentation; geometric electron optics and its problems; and special electron microscope specimen stages. Part III explains the theory of electron diffraction image contrast and then elaborates on related areas such as the application of electron diffraction and of electron microscopy to radiation; computing methods; and problems in electron microscopy. Part IV includes topics such as the transfer of image information in the electron microscope; phase contrast microscopy; and the magnetic phase contrast. The text is recommended for electron microscopists who are interested in the application of their field in material science, as well as for experts in the field of material science and would like to know about the importance of electron microscopy.
Preface to Second Edition Several new topics have been added, some small errors have been corrected and some new references have been added in this edition. New topics include aberration corrected instruments, scanning confocal mode of operations, Bloch wave eigenvalue methods and parallel computing techniques. The ?rst edition - cluded a CD with computer programs, which is not included in this edition. - stead the associated programs will be available on an associated web site (currently people.ccmr.cornell.edu/ ̃kirkland,but may move as time goes on). I wish to thank Mick Thomas for preparing the specimen used to record the image in Fig.5.26 and to thank Stephen P. Meisburger for suggesting an interesting biological specimen to use in Fig.7.24. Again, I apologize in advance for leaving out some undoubtedlyoutstanding r- erences. I also apologize for the as yet undiscovered errors that remain in the text. Earl J. Kirkland, December 2009 Preface to First Edition Image simulation has become a common tool in HREM (High Resolution El- tron Microscopy) in recent years. However, the literature on the subject is scattered among many different journals and conference proceedings that have occurred in the last two or three decades. It is dif?cult for beginners to get started in this ?eld.
The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.
The Advanced Study Institute provided an opportunity for researchers in universities, industry and National and International Laboratories, from the disciplines ofmaterials science, physics, chemistry and engineering to meet together in an assessment of the impact of electron and scanning probe microscopy on advanced material research. Since these researchers have traditionally relied upon different approaches, due to their different scientific background, to advanced materials problem solving, presentations and discussion within the Institute sessions were initially devoted to developing a set ofmutually understood basic concepts, inherently related to different techniques ofcharacterization by microscopy and spectroscopy. Particular importance was placed on Electron Energy Loss Spectroscopy (EELS), Scanning Probe Microscopy (SPM), High Resolution Transmission and Scanning Electron Microscopy (HRTEM, HRSTEM) and Environmental Scanning Electron Microscopy (ESEM). It was recognized that the electronic structure derived directly from EELS analysis as well as from atomic positions in HRTEM or High Angle Annular Dark Field STEM can be used to understand the macroscopic behaviour of materials. The emphasis, however, was upon the analysis of the electronic band structure of grain boundaries, fundamental for the understanding of macroscopic quantities such as strength, cohesion, plasticity, etc.
Challenges and Opportunities Selected, peer reviewed papers from the International Conference on Advanced Materials Processing – Challenges and Opportunities (AMPCO 2012), November 2-4, 2012, Roorkee, India
This journal is devoted to the latest research on physics, publishing articles on everything from elementary particle behavior to black holes and the history of the universe.
Scanning Transmission Electron Microscopy is focused on discussing the latest approaches in the recording of high-fidelity quantitative annular dark-field (ADF) data. It showcases the application of machine learning in electron microscopy and the latest advancements in image processing and data interpretation for materials notoriously difficult to analyze using scanning transmission electron microscopy (STEM). It also highlights strategies to record and interpret large electron diffraction datasets for the analysis of nanostructures. This book: Discusses existing approaches for experimental design in the recording of high-fidelity quantitative ADF data Presents the most common types of scintillator-photomultiplier ADF detectors, along with their strengths and weaknesses. Proposes strategies to minimize the introduction of errors from these detectors and avenues for dealing with residual errors Discusses the practice of reliable multiframe imaging, along with the benefits and new experimental opportunities it presents in electron dose or dose-rate management Focuses on supervised and unsupervised machine learning for electron microscopy Discusses open data formats, community-driven software, and data repositories Proposes methods to process information at both global and local scales, and discusses avenues to improve the storage, transfer, analysis, and interpretation of multidimensional datasets Provides the spectrum of possibilities to study materials at the resolution limit by means of new developments in instrumentation Recommends methods for quantitative structural characterization of sensitive nanomaterials using electron diffraction techniques and describes strategies to collect electron diffraction patterns for such materials This book helps academics, researchers, and industry professionals in materials science, chemistry, physics, and related fields to understand and apply computer-science–derived analysis methods to solve problems regarding data analysis and interpretation of materials properties.