Advanced Interconnects for ULSI Technology
Advanced Interconnects for ULSI Technology

Author: Mikhail Baklanov

Publisher: John Wiley & Sons

Published: 2012-04-02

Total Pages: 616

ISBN-13: 0470662549

DOWNLOAD EBOOK

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Morphological Evolution of Electrodeposits and Electrochemical Processing in ULSI Fabrication and Electrodeposition of and on Semiconductors IV
Morphological Evolution of Electrodeposits and Electrochemical Processing in ULSI Fabrication and Electrodeposition of and on Semiconductors IV

Author: Kazuo Kondo

Publisher: The Electrochemical Society

Published: 2005

Total Pages: 422

ISBN-13:

DOWNLOAD EBOOK

Papers in this volume are from the 199th ECS Meeting, held in Washington, DC, Spring 2001. Morphology evolution encompasses electrochemical processing in ULSI fabrication, shape evolution, growth habit, and microstructure of electrodeposits. The most prominent example at present is the electrochemical deposition of copper for ULSI interconnects. Many other electrochemical processes at various stages of emergence and development hold promise for the electronics industry and beyond.

Nucleation and Growth Processes in Materials
Nucleation and Growth Processes in Materials

Author: Antonios Gonis

Publisher:

Published: 2000

Total Pages: 474

ISBN-13:

DOWNLOAD EBOOK

One of the goals of materials science is to design alloys with pre-specified desirable technological properties. To achieve this goal, it is necessary to have a thorough understanding of the fundamental mechanisms underlying materials behavior. In particular, one must understand the effects on alloy properties caused by intentional changes in concentration and how the combinations of temperature, time and uncontrollable foreign impurities affect microstructure. In addition to the equilibrium phase information contained in phase diagrams, nonequilibrium dynamic processes and metastable phases are known to be crucial in determining materials properties. This volume brings together researchers working on various aspects of nonequilibrium processes in materials to discuss current research issues and to provide guidelines for future work. Particular attention was paid to understanding particle nucleation and growth, both experimentally and theoretically, solid-state reactions, nanosystems, liquid-solid transformations, and solidification and amorphization. On the theoretical side, fundamental principles governing nucleation and growth, and related phenomena such as coarsening and Ostwald ripening, are discussed. Progress is also reported on the phase field method and on Monte Carlo simulations.

CMOS/BiCMOS ULSI
CMOS/BiCMOS ULSI

Author: Kiat Seng Yeo

Publisher: Prentice Hall

Published: 2002

Total Pages: 634

ISBN-13:

DOWNLOAD EBOOK

For upper level and graduate level Electrical and Computer Engineering courses in Integrated Circuit Design as well as professional circuit designers, engineers and researchers working in portable wireless communications hardware. This book presents the fundamentals of Complementary Metal Oxide Semiconductor (CMOS) and Bipolar compatible Complementary Metal Oxide Semiconductor (BiCMOS) technology, as well as the latest technological advances in the field. It discusses the concepts and techniques of new integrated circuit design for building high performance and low power circuits and systems for current and future very-large-scale-integration (VLSI) and giga-scale-integration (GSI) applications. CMOS/BiCMOS ULSI: Low-Voltage Low-Power is an essential resource for every professional moving toward lower voltage, lower power, and higher performance VLSI circuits and subsystems design.

Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits: Volume 514
Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits: Volume 514

Author: S. P. Murarka

Publisher:

Published: 1998-11-02

Total Pages: 596

ISBN-13:

DOWNLOAD EBOOK

Comprising the proceedings of an MRS symposium held in April of 1998, contributions in this volume are divided into ten sections: interconnection frontiers; aluminum interconnects; cobalt and other silicides; titanium silicide; MOSFET, source, drain, and interconnect engineering; copper interconnects and barriers; a poster session on advanced interconnects and contacts; contacts to compound semiconductor devices; novel interconnect materials and schemes; and diffusion barriers. Annotation copyrighted by Book News, Inc., Portland, OR