Advanced CMOS Cell Design
Advanced CMOS Cell Design

Author: Etienne Sicard

Publisher: McGraw Hill Professional

Published: 2007-03-02

Total Pages: 384

ISBN-13: 0071509054

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Take Advantage of Today's Most Sophisticated Techniques for Designing and Simulating Complex CMOS Integrated Circuits! An essential working tool for electronic circuit designers and students alike, Advanced CMOS Cell Design is a practice-based guide to today's most sophisticated design and simulation techniques for CMOS (complementary metal oxide semiconductor) integrated circuits. Written by two internationally renowned circuit designers, this outstanding book presents the state-of-the-art techniques required to design and simulate every type of CMOS integrated circuit. The reference contains unsurpassed coverage of deep-submicron to nanoscale technologies...SRAM, DRAM, EEPROM, and Flash...design of a simple microprocessor...configurable logic circuits...data converters... input/output...design rules... and much more. Packed with 100 detailed illustrations, Advanced CMOS Cell Design enables you to: Explore the latest embedded memory architectures Master the programming of logic circuits Get expert guidance on radio frequency (RF) circuit design Learn more about silicon on insulator (SOI) technologies Acquire a full range of circuit simulation tools This Advanced CMOS Circuit Design Toolkit Covers- • Deep-Submicron to Nanoscale Technologies • SRAM, DRAM, EEPROM, and Flash • Design of a Simple Microprocessor • Configurable Logic Circuits • Radio Frequency (RF) Circuit Design • Data Converters • Input/Output • Silicon on Insulator (SOI) Technologies • Impact of Nanotechnologies • Design Rules • Quick-Reference Sheets

Basics of CMOS Cell Design
Basics of CMOS Cell Design

Author: Etienne Sicard

Publisher: McGraw Hill Professional

Published: 2007-03-02

Total Pages: 449

ISBN-13: 0071509062

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Design and Simulate Any Type of CMOS Circuit! Electronic circuit designers and electronic engineering students can turn to Basics of CMOS Cell Design for a practice-based introduction to the design and simulation of every major type of CMOS (complementary metal oxide semiconductor) integrated circuit. You will find step-by-step explanations of everything they need for designing and simulating CMOS integrated circuits in deep-submicron technology, including MOS devices...inverters...interconnects...basic gates ...arithmetics...sequential cell design...and analog basic cells. The book also presents design rules, Microwind program operation and commands, design logic editor operation and commands, and quick-reference sheets. Filled with 100 skills-building illustrations, Basics of CMOS Cell Design features: Expert guidance on MOS device modeling Complete details on micron and deep-submicron technologies Clear, concise information on basic logic gates Full coverage of analog cells A wealth of circuit simulation tools Inside This Landmark CMOS Circuit Design Guide— • MOS Devices and Technology • MOS Modeling • The Inverter • Interconnects • Basic Gates • Arithmetics • Sequential Cell Design • Analog Cells • Appendices: Design Rules; Microwind Program Operation and Commands; Design Logic Editor Operation and Commands; Quick- Reference Sheets

Advanced CMOS Process Technology
Advanced CMOS Process Technology

Author: J Pimbley

Publisher: Elsevier

Published: 2012-12-02

Total Pages: 305

ISBN-13: 0323156800

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Advanced CMOS Process Technology is part of the VLSI Electronics Microstructure Science series. The main topic of this book is complementary metal-oxide semiconductor or CMOS technology, which plays a significant part in the electronics systems. The topics covered in this book range from metallization, isolation techniques, reliability, and yield. The volume begins with an introductory chapter that discusses the microelectronics revolution of the 20th century. Then Chapter 2 puts focus on the CMOS devices and circuit background, discussing CMOS capacitors and field effect transistors. Metallization topics and concepts are covered in Chapter 3, while isolation techniques are tackled in Chapter 4. Long-term reliability of CMOS is the topic covered in Chapter 5. Finally, the ability of semiconductor technology to yield circuits is discussed in Chapter 6. The book is particularly addressed to engineers, scientists, and technical managers.

Low Power Circuit Design Using Advanced CMOS Technology
Low Power Circuit Design Using Advanced CMOS Technology

Author: Milin Zhang

Publisher: CRC Press

Published: 2022-09-01

Total Pages: 551

ISBN-13: 1000795020

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Low Power Circuit Design Using Advanced CMOS Technology is a summary of lectures from the first Advanced CMOS Technology Summer School (ACTS) 2017. The slides are selected from the handouts, while the text was edited according to the lecturers talk.ACTS is a joint activity supported by the IEEE Circuit and System Society (CASS) and the IEEE Solid-State Circuits Society (SSCS). The goal of the school is to provide society members as well researchers and engineers from industry the opportunity to learn about new emerging areas from leading experts in the field. ACTS is an example of high-level continuous education for junior engineers, teachers in academe, and students. ACTS was the results of a successful collaboration between societies, the local chapter leaders, and industry leaders. This summer school was the brainchild of Dr. Zhihua Wang, with strong support from volunteers from both the IEEE SSCS and CASS. In addition, the local companies, Synopsys China and Beijing IC Park, provided support.This first ACTS was held in the summer 2017 in Beijing. The lectures were given by academic researchers and industry experts, who presented each 6-hour long lectures on topics covering process technology, EDA skill, and circuit and layout design skills. The school was hosted and organized by the CASS Beijing Chapter, SSCS Beijing Chapter, and SSCS Tsinghua Student Chapter. The co-chairs of the first ACTS were Dr. Milin Zhang, Dr. Hanjun Jiang and Dr. Liyuan Liu. The first ACTS was a great success as illustrated by the many participants from all over China as well as by the publicity it has been received in various media outlets, including Xinhua News, one of the most popular news channels in China.

Low Power VCO Design in CMOS
Low Power VCO Design in CMOS

Author: Marc Tiebout

Publisher: Springer Science & Business Media

Published: 2006-01-25

Total Pages: 126

ISBN-13: 354029256X

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This work covers the design of CMOS fully integrated low power low phase noise voltage controlled oscillators for telecommunication or datacommuni- tion systems. The need for low power is obvious, as mobile wireless telecommunications are battery operated. As wireless telecommunication systems use oscillators in frequency synthesizers for frequency translation, the selectivity and signal to noise ratio of receivers and transmitters depend heavily on the low phase noise performance of the implemented oscillators. Datacommunication s- tems need low jitter, the time-domain equivalent of low phase noise, clocks for data detection and recovery. The power consumption is less critical. The need for multi-band and multi-mode systems pushes the high-integration of telecommunication systems. This is o?ered by sub-micron CMOS feat- ing digital ?exibility. The recent crisis in telecommunication clearly shows that mobile hand-sets became mass-market high-volume consumer products, where low-cost is of prime importance. This need for low-cost products - livens tremendously research towards CMOS alternatives for the bipolar or BiCMOS solutions in use today.

Low Power and Reliable SRAM Memory Cell and Array Design
Low Power and Reliable SRAM Memory Cell and Array Design

Author: Koichiro Ishibashi

Publisher: Springer Science & Business Media

Published: 2011-08-18

Total Pages: 154

ISBN-13: 3642195687

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Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

CMOS IC Layout
CMOS IC Layout

Author: Dan Clein

Publisher: Elsevier

Published: 1999-01-07

Total Pages: 287

ISBN-13: 0080502113

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This book includes basic methodologies, review of basic electrical rules and how they apply, design rules, IC planning, detailed checklists for design review, specific layout design flows, specialized block design, interconnect design, and also additional information on design limitations due to production requirements.*Practical, hands-on approach to CMOS layout theory and design*Offers engineers and technicians the training materials they need to stay current in circuit design technology.*Covers manufacturing processes and their effect on layout and design decisions

Digital Integrated Circuit Design
Digital Integrated Circuit Design

Author: Hubert Kaeslin

Publisher: Cambridge University Press

Published: 2008-04-28

Total Pages: 878

ISBN-13: 0521882672

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This practical, tool-independent guide to designing digital circuits takes a unique, top-down approach, reflecting the nature of the design process in industry. Starting with architecture design, the book comprehensively explains the why and how of digital circuit design, using the physics designers need to know, and no more.

CMOS
CMOS

Author: R. Jacob Baker

Publisher: John Wiley & Sons

Published: 2008

Total Pages: 1074

ISBN-13: 0470229411

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This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.

Variation-Aware Advanced CMOS Devices and SRAM
Variation-Aware Advanced CMOS Devices and SRAM

Author: Changhwan Shin

Publisher: Springer

Published: 2016-06-06

Total Pages: 141

ISBN-13: 9401775974

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This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.