This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
This proceedings volume contains the contributions of the speakers who attended the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" held at the Sanatorium Pushcha OLema, Kyiv, th Ukraine from It" to 15 October 1998. This meeting was the second NATO Silicon on Insulator (SOl) Workshop to be held in st the Ukraine where the first meeting (Gurzuf, Crimea, 1 to 4th November 1994) focussed upon the physical and technical problems to be addressed in order to exploit the advantages of incorporating SOl materials in device and sensor technologies. On this occasion emphasis was placed upon firstly, promoting the use of SOl substrates for a range of novel device and circuit applications and secondly, addressing the economic issues of incorporating SOl processing technologies and device technologies within the framework of the resources available within the laboratories and factories of the Newly Independent States (NIS). The primary goal of both workshops has been the breaking of the barriers that inhibit closer collaboration between scientists and engineers in the NATO countries and the NIS. Indeed, it was a pleasure for attendees at the first meeting to renew acquaintances and for the first time attendees to make new contacts and enjoy the warm hospitality offered by our hosts in Kyiv. An outcome was the forging of new links and concrete proposals for future collaborations.
A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
