Mid-infrared Optoelectronics

Mid-infrared Optoelectronics

Author: Eric TourniƩ

Publisher: Woodhead Publishing

Published: 2019-10-19

Total Pages: 754

ISBN-13: 0081027389

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Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. - Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices - Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration - Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging


Comprehensive Semiconductor Science and Technology

Comprehensive Semiconductor Science and Technology

Author:

Publisher: Newnes

Published: 2011-01-28

Total Pages: 3572

ISBN-13: 0080932282

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Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts


RF Probe-Induced On-Wafer Measurement Errors in the Millimeter-Wave Frequency Range

RF Probe-Induced On-Wafer Measurement Errors in the Millimeter-Wave Frequency Range

Author: Mueller, Daniel

Publisher: KIT Scientific Publishing

Published: 2018-11-22

Total Pages: 212

ISBN-13: 3731508222

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Measurement at millimeter-wave frequencies are prone to parasitic effects which distort the overall results. Especially the use of RF probes introduces unknown distortions, even after the measurement setup is calibrated. This works investigates these distortions based on electromagnetic field simulations of integrated circuits in conjunction with models of the used RF probes. This allows to comprehend the observed distortions and successfully resolve the root of the distortions.


Handbook for III-V High Electron Mobility Transistor Technologies

Handbook for III-V High Electron Mobility Transistor Technologies

Author: D. Nirmal

Publisher: CRC Press

Published: 2019-05-14

Total Pages: 443

ISBN-13: 0429862539

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This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots


Compound Semiconductor Materials and Devices

Compound Semiconductor Materials and Devices

Author: Zhaojun Liu

Publisher: Morgan & Claypool Publishers

Published: 2016-02-22

Total Pages: 75

ISBN-13: 1627058532

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Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.


Advanced Nanoelectronics

Advanced Nanoelectronics

Author: Muhammad Mustafa Hussain

Publisher: John Wiley & Sons

Published: 2019-01-04

Total Pages: 284

ISBN-13: 352734358X

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Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.


High Speed VCSELs for Optical Interconnects

High Speed VCSELs for Optical Interconnects

Author: Alex Mutig

Publisher: Springer Science & Business Media

Published: 2011-01-12

Total Pages: 179

ISBN-13: 3642165702

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The transmission speed of data communication systems is forecast to increase exponentially over the next decade. Development of both Si-based high-speed drivers as well as III-V-semiconductor-based high-speed vertical cavity surface emitting lasers (VCSELs) are prerequisites for future ultrahigh data-rate systems. This thesis presents: - a survey of the present state of the art of VCSELs - a systematic investigation of the various effects limiting present VCSELs - a catalogue of solutions to overcome present limits - detailed progress in modelling, fabricating and testing the currently most advanced VCSELs at the two commercially most important wavelengths.


Analog and VLSI Circuits

Analog and VLSI Circuits

Author: Wai-Kai Chen

Publisher: CRC Press

Published: 2018-10-08

Total Pages: 827

ISBN-13: 1351835017

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Featuring hundreds of illustrations and references, this volume in the third edition of the Circuits and Filters Handbook, provides the latest information on analog and VLSI circuits, omitting extensive theory and proofs in favor of numerous examples throughout each chapter. The first part of the text focuses on analog integrated circuits, presenting up-to-date knowledge on monolithic device models, analog circuit cells, high performance analog circuits, RF communication circuits, and PLL circuits. In the second half of the book, well-known contributors offer the latest findings on VLSI circuits, including digital systems, data converters, and systolic arrays.