3-Dimensional Process Simulation
3-Dimensional Process Simulation

Author: J. Lorenz

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 207

ISBN-13: 3709169054

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Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field.

Technology CAD Systems
Technology CAD Systems

Author: Franz Fasching

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 313

ISBN-13: 370919315X

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As the cost of developing new semiconductor technology at ever higher bit/gate densities continues to grow, the value of using accurate TCAD simu lation tools for design and development becomes more and more of a necessity to compete in today's business. The ability to tradeoff wafer starts in an advanced piloting facility for simulation analysis and optimization utilizing a "virtual fab" S/W tool set is a clear economical asset for any semiconductor development company. Consequently, development of more sophisticated, accurate, physics-based, and easy-to-use device and process modeling tools will receive continuing attention over the coming years. The cost of maintaining and paying for one's own internal modeling tool development effort, however, has caused many semiconductor development companies to consider replacing some or all of their internal tool development effort with the purchase of vendor modeling tools. While some (noteably larger) companies have insisted on maintaining their own internal modeling tool development organization, others have elected to depend totally on the tools offered by the TCAD vendors and have consequently reduced their mod eling staffs to a bare minimal support function. Others are seeking to combine the best of their internally developed tool suite with "robust", "proven" tools provided by the vendors, hoping to achieve a certain synergy as well as savings through this approach. In the following sections we describe IBM's internally developed suite of TCAD modeling tools and show several applications of the use of these tools.

Acta Numerica 1996: Volume 5
Acta Numerica 1996: Volume 5

Author: Arieh Iserles

Publisher: Cambridge University Press

Published: 1996-07-25

Total Pages: 412

ISBN-13: 9780521572347

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Acta Numerica is an annual volume presenting survey papers in numerical analysis. Each year the editorial board selects significant topics and invites papers from authors who have made notable contributions to the development of that topic. The articles are intended to summarize the field at a level accessible to graduate students and researchers. Acta Numerica has proved to be a valuable tool not only for researchers and professionals wishing to develop their understanding of the subject and follow developments, but also as an advanced teaching aid at colleges and universities. Articles in previous volumes have been expanded into both monographs and textbooks, and many of the original articles themselves have been used as the prime resource for graduate courses.

Plasma Etching Processes for CMOS Devices Realization
Plasma Etching Processes for CMOS Devices Realization

Author: Nicolas Posseme

Publisher: Elsevier

Published: 2017-01-25

Total Pages: 138

ISBN-13: 0081011962

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Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. - Helps readers discover the master technology used to pattern complex structures involving various materials - Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials - Teaches users how etch compensation helps to create devices that are smaller than 20 nm

Simulation of Semiconductor Devices and Processes
Simulation of Semiconductor Devices and Processes

Author: Heiner Ryssel

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 515

ISBN-13: 3709166195

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SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

Level Set Methods and Fast Marching Methods
Level Set Methods and Fast Marching Methods

Author: J. A. Sethian

Publisher: Cambridge University Press

Published: 1999-06-13

Total Pages: 404

ISBN-13: 9780521645577

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This new edition of Professor Sethian's successful text provides an introduction to level set methods and fast marching methods, which are powerful numerical techniques for analyzing and computing interface motion in a host of settings. They rely on a fundamental shift in how one views moving boundaries; rethinking the natural geometric Lagrangian perspective and exchanging it for an Eulerian, initial value partial differential equation perspective. For this edition, the collection of applications provided in the text has been expanded, including examples from physics, chemistry, fluid mechanics, combustion, image processing, material science, fabrication of microelectronic components, computer vision, computer-aided design, and optimal control theory. This book will be a useful resource for mathematicians, applied scientists, practising engineers, computer graphic artists, and anyone interested in the evolution of boundaries and interfaces.