Sic Materials And Devices - Volume 1

Sic Materials And Devices - Volume 1

Author: Sergey Rumyantsev

Publisher: World Scientific

Published: 2006-07-25

Total Pages: 342

ISBN-13: 981447777X

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After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.


SiC Materials and Devices

SiC Materials and Devices

Author: Michael Shur

Publisher: World Scientific

Published: 2006

Total Pages: 342

ISBN-13: 9812568352

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After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.


The Physics of Semiconductor Devices

The Physics of Semiconductor Devices

Author: R. K. Sharma

Publisher: Springer

Published: 2019-01-31

Total Pages: 1260

ISBN-13: 3319976044

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This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.


SiC Materials and Devices

SiC Materials and Devices

Author: Michael Shur

Publisher: World Scientific

Published: 2007

Total Pages: 143

ISBN-13: 9812703837

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Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.


GaN and ZnO-based Materials and Devices

GaN and ZnO-based Materials and Devices

Author: Stephen Pearton

Publisher: Springer Science & Business Media

Published: 2012-01-14

Total Pages: 497

ISBN-13: 3642235212

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The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.


More than Moore

More than Moore

Author: Guo Qi Zhang

Publisher: Springer Science & Business Media

Published: 2010-01-23

Total Pages: 338

ISBN-13: 0387755934

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In the past decades, the mainstream of microelectronics progression was mainly powered by Moore's law focusing on IC miniaturization down to nano scale. However, there is a fast increasing need for "More than Moore" (MtM) products and technology that are based upon or derived from silicon technologies, but do not simply scale with Moore’s law. This book provides new vision, strategy and guidance for the future technology and business development of micro/nanoelectronics.


Tunable Laser Diodes

Tunable Laser Diodes

Author: Markus-Christian Amann

Publisher: Artech House Optoelectronics L

Published: 1998

Total Pages: 0

ISBN-13: 9780890069639

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This comprehensive reference discusses the underlying physics, operational principles, and performance and applications of tunable laser diodes. The book is supplemented with practical examples and helpful notations.


The Secret Shofar of Barcelona

The Secret Shofar of Barcelona

Author: Jacqueline Dembar Greene

Publisher: Kar-Ben Publishing ™

Published: 2014-01-01

Total Pages: 60

ISBN-13: 1512496308

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Symphony conductor Don Fernando longs to hear the sounds of the shofar. Like other conversos during the Spanish Inquisition, he has to hide his Jewish religion and pretend to follow the teachings of the church. But when he is asked to perform a concert celebrating the new world, he and his son Rafael devise a clever plan to usher in the Jewish New Year in plain sight of the Spanish nobility.