Wide bandgap light emitters include laser diodes and light-emitting diodes (LED), the most modern diodes widely used in current technologies as microelectronics and optoelectronics. Rapid advances have been made during the last few years, with the result that more research is devoted to applications in line with the expanding market for optoelectronics. This volume deals with recent research results on wide bandgap light emitting materials, introducing new concepts for devices based on these materials. The editors, scientists with the best reputations, have invited authors from different institutions who are acknowledged researchers in the field as well as being involved in industrial applications. They represent several lines of research: III-nitride compounds, ZnO and ZnSe, the most promising materials for device applications.
This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.
The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
The introduction of the SiC substrate and the demonstration of bright III-N light-emitting diodes were catalysts for a large increase in research and development of wide-bandgap semiconductor materials and devices during the nineties. This symposium, "Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999," from the 1999 MRS Spring Meeting in San Francisco, California, focused on high-power, high-frequency and high-temperature applications of these wide-bandgap semiconductors. The symposium attracted a wide range of researchers who presented 120 papers in nine different sessions on topics such as bulk crystal growth, epitaxy, materials characterization, processing, and devices.
Wide-bandgap semiconductors have a long and illustrious history, starting with the first paper on SiC light-emitting diodes published in 1907. Since then, interest in wide-bandgap semiconductors has skyrocketed. Improved material quality, important breakthroughs both in SiC and GaN technologies, and the emergence of blue GaN-based lasers, have stimulated this progress. To provide a fairly complete picture of this important field, most of the work presented at the conference is included in the volume. In addition, invited papers present an excellent overview of the current state of the art and offer projections for future developments. Topics include: GaN materials and devices; crystal growth; SiC materials and devices; characterization of wide-bandgap semiconductors; and processing characterization and properties of wide-bandgap materials.
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and device applications: inorganic wide-bandgap semiconductor materials, including III-nitrides, II-oxides, SiC, diamond, II-VI, and emerging materials.
This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.
Organic Light-Emitting Materials and Devices provides a single source of information covering all aspects of OLEDs, including the systematic investigation of organic light-emitting materials, device physics and engineering, and manufacturing and performance measurement techniques. This Second Edition is a compilation of the advances made in recent years and of the challenges facing the future development of OLED technology. Featuring chapters authored by internationally recognized academic and industrial experts, this authoritative text: Introduces the history, fundamental physics, and potential applications of OLEDs Reviews the synthesis, properties, and device performance of electroluminescent materials used in OLEDs Reflects the current state of molecular design, exemplifying more than 600 light-emitting polymers and highlighting the most efficient materials and devices Explores small molecules-based OLEDs, detailing hole- and electron-injection and electron-transport materials, electron- and hole-blocking materials, sensitizers, and fluorescent and phosphorescent light-emitting materials Describes solution-processable phosphorescent polymer LEDs, energy transfer processes, polarized OLEDs, anode materials, and vapor deposition manufacturing techniques employed in OLED fabrication Discusses flexible display, the backplane circuit technology for organic light-emitting displays, and the latest microstructural characterization and performance measurement techniques Contains abundant diagrams, device configurations, and molecular structures clearly illutrating the presented ideas Organic Light-Emitting Materials and Devices, Second Edition offers a comprehensive overview of the OLED field and can serve as a primary reference for those needing additional information in any particular subarea of organic electroluminescence. This book should attract the attention of materials scientists, synthetic chemists, solid-state physicists, and electronic device engineers, as well as industrial managers and patent lawyers engaged in OLED-related business areas.
