The emphasis in Rock Mechanics for Resources, Energy and Environment is on the application of rock mechanics to the extraction of natural resources, securing energy supplies and protecting the environment surrounding rock that is subject to engineering activities. The book will be of interest to rock mechanics researchers as well as to professionals who are involved in the various branches of rock engineering.
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).
These proceedings contain the scientific contributions presented at the 2nd Asian Rock Mechanics Symposium (ISRM 2001 - 2nd ARMS). The theme of the symposium was "Frontiers of Rock Mechanics and Sustainable Development in the 21st Century".
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Forty one years ago, the International Society for Rock Mechanics (ISRM) held its 1st International Congress in Lisbon, Portugal. In July 2007, the 11th ISRM Congress returned to Lisbon, where the Portuguese Geotechnical Society (SPG), the Portuguese National Group of the ISRM, hosted the meeting. The Second Half Century of Rock Mechanics comprises
Nowadays, it is quite easy to see various applications of fibrous composites, functionally graded materials, laminated composite, nano-structured reinforcement, morphing composites, in many engineering fields, such as aerospace, mechanical, naval and civil engineering. The increase in the use of composite structures in different engineering practices justify the present international meeting where researches from every part of the globe can share and discuss the recent advancements regarding the use of standard structural components within advanced applications such as buckling, vibrations, repair, reinforcements, concrete, composite laminated materials and more recent metamaterials. For this reason, the establishment of this 19th edition of International Conference on Composite Structures has appeared appropriate to continue what has been begun during the previous editions. ICCS wants to be an occasion for many researchers from each part of the globe to meet and discuss about the recent advancements regarding the use of composite structures, sandwich panels, nanotechnology, bio-composites, delamination and fracture, experimental methods, manufacturing and other countless topics that have filled many sessions during this conference. As a proof of this event, which has taken place in Porto (Portugal), selected plenary and keynote lectures have been collected in the present book.
