Transport Equations for Semiconductors
Transport Equations for Semiconductors

Author: Ansgar Jüngel

Publisher: Springer

Published: 2009-04-20

Total Pages: 326

ISBN-13: 3540895264

DOWNLOAD EBOOK

Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts.

Semiconductor Equations
Semiconductor Equations

Author: Peter A. Markowich

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 261

ISBN-13: 3709169615

DOWNLOAD EBOOK

In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.

Simulation of Semiconductor Processes and Devices 2001
Simulation of Semiconductor Processes and Devices 2001

Author: Dimitris Tsoukalas

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 463

ISBN-13: 3709162440

DOWNLOAD EBOOK

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Compound Semiconductor Device Physics
Compound Semiconductor Device Physics

Author: Sandip Tiwari

Publisher: Academic Press

Published: 2013-10-22

Total Pages: 845

ISBN-13: 148328929X

DOWNLOAD EBOOK

This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions.One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding

Guide to State-of-the-Art Electron Devices
Guide to State-of-the-Art Electron Devices

Author: Joachim N. Burghartz

Publisher: John Wiley & Sons

Published: 2013-03-19

Total Pages: 637

ISBN-13: 1118517539

DOWNLOAD EBOOK

Winner, 2013 PROSE Award, Engineering and Technology Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society.

Hyperbolic Problems: Theory, Numerics, Applications - Proceedings Of The Fifth International Conference
Hyperbolic Problems: Theory, Numerics, Applications - Proceedings Of The Fifth International Conference

Author: James Glimm

Publisher: World Scientific

Published: 1996-03-14

Total Pages: 510

ISBN-13: 9814548588

DOWNLOAD EBOOK

The intellectual center of this proceedings volume is the subject of conservation laws. Conservation laws are the most basic model of many continuum processes, and for this reason they govern the motion of fluids, solids, and plasma. They are basic to the understanding of more complex modeling issues, such as multiphase flow, chemically reacting flow, and non-equilibrium thermodynamics. Equations of this type also arise in novel and unexpected areas, such as the pattern recognition and image processing problem of edge enhancement and detection. The articles in this volume address the entire range of the study of conservation laws, including the fundamental mathematical theory, familiar and novel applications, and the numerical problem of finding effective computational algorithms for the solution of these problems.

Hierarchical Device Simulation
Hierarchical Device Simulation

Author: Christoph Jungemann

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 278

ISBN-13: 3709160863

DOWNLOAD EBOOK

This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation
The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation

Author: Mahdi Pourfath

Publisher: Springer

Published: 2014-07-05

Total Pages: 268

ISBN-13: 370911800X

DOWNLOAD EBOOK

For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.

Heat Transfer Physics
Heat Transfer Physics

Author: Massoud Kaviany

Publisher: Cambridge University Press

Published: 2014-02-10

Total Pages: 795

ISBN-13: 110778588X

DOWNLOAD EBOOK

This graduate textbook describes atomic-level kinetics (mechanisms and rates) of thermal energy storage, transport (conduction, convection, and radiation), and transformation (various energy conversions) by principal energy carriers. The approach combines the fundamentals of molecular orbitals-potentials, statistical thermodynamics, computational molecular dynamics, quantum energy states, transport theories, solid-state and fluid-state physics, and quantum optics. The textbook presents a unified theory, over fine-structure/molecular-dynamics/Boltzmann/macroscopic length and time scales, of heat transfer kinetics in terms of transition rates and relaxation times, and its modern applications, including nano- and microscale size effects. Numerous examples, illustrations, and homework problems with answers that enhance learning are included. This new edition includes applications in energy conversion (including chemical bond, nuclear, and solar), expanded examples of size effects, inclusion of junction quantum transport, and discussion of graphene and its phonon and electronic conductances. New appendix coverage of Phonon Contributions Seebeck Coefficient and Monte Carlo Methods are also included.