Theoretical Study of Quantum Transport in Realistic Semiconductor Devices
Theoretical Study of Quantum Transport in Realistic Semiconductor Devices

Author: Pratik B. Vyas

Publisher:

Published: 2019

Total Pages:

ISBN-13:

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Semiconductor devices have transformed the world through tremendous technological advances in all aspects of life imaginable. An important aspect of the research into improving these devices is computer-aided simulation and modeling of their electrical behavior. The ability to study theoretically semiconductor devices allows us to predict their behavior as well as optimize their performance before having to physically fabricate the device, saving us money and time. To this end, we have developed a novel approach, based on the effective mass approximation, to study theoretically quantum transport, both ballistic and dissipative, in realistic semiconductor devices. Our model takes into account quantum confinement and other non-local quantum effects affecting electronic transport in the current and near future generations of transistors. As an example of application, we have studied the electrical behavior of well-known silicon field-effect transistors (FETs) and the factors affecting their performance.

Theory of Semiconductor Quantum Devices
Theory of Semiconductor Quantum Devices

Author: Fausto Rossi

Publisher: Springer Science & Business Media

Published: 2011-01-13

Total Pages: 382

ISBN-13: 3642105564

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Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectronic nanodevices, including quantum-cascade laser sources and detectors, few-electron/exciton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts.

Quantum Transport in Submicron Devices
Quantum Transport in Submicron Devices

Author: Wim Magnus

Publisher: Springer Science & Business Media

Published: 2002-06-12

Total Pages: 300

ISBN-13: 9783540433965

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The aim of this book is to resolve the problem of electron and hole transport with a coherent and consistent theory that is relevant to the understanding of transport phenomena in submicron devices. Along the road, readers encounter landmarks in theoretical physics as the authors guide them through the strong and weak aspects of various hypotheses.

Quantum Transport in Semiconductors
Quantum Transport in Semiconductors

Author: David K. Ferry

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 311

ISBN-13: 1489923594

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The majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied fields. These fields are most likely to be strongly varying in both space and time. Most of the literature on quantum transport in semiconductors (or in metallic systems, for that matter) is restricted to the equilibrium approach, in which spectral densities are maintained as semiclassical energy conserving delta functions, or perhaps incorporating some form of collision broadening through a Lorentzian shape, and the distribution functions are kept in the equilibrium Fermi-Dirac form. The most familiar field of nonequilibrium transport, at least for the semiconductor world, is that of hot carriers in semiconductors.

Quantum Transport in Semiconductor Submicron Structures
Quantum Transport in Semiconductor Submicron Structures

Author: B. Kramer

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 382

ISBN-13: 9400917600

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The articles in this book have been selected from the lectures of a NATO Advanced Study Institute held at Bad Lauterberg (Germany) in August 1995. Internationally well-known researchers in the field of mesoscopic quantum physics provide insight into the fundamental physics underlying the mesoscopic transport phenomena in structured semiconductor inversion layers. In addition, some of the most recent achievements are reported in contributed papers. The aim of the volume is not to give an overview over the field. Instead, emphasis is on interaction and correlation phenomena that turn out to be of increasing importance for the understanding of the phenomena in the quantum Hall regime, and in the transport through quantum dots. The present status of the quantum Hall experiments and theory is reviewed. As a "key example" for non-Fermi liquid behavior the Luttinger liquid is introduced, including some of the most recent developments. It is not only of importance for the fractional quantum Hall effect, but also for the understanding of transport in quantum wires. Furthermore, the chaotic and the correlation aspects of the transport in quantum dot systems are described. The status of the experimental work in the area of persistent currents in semiconductor systems is outlined. The construction of one of the first single-electron transistors is reported. The theoretical approach to mesoscopic transport, presently a most active area, is treated, and some aspects of time-dependent transport phenomena are also discussed.

Quantum Transport in Semiconductor Devices
Quantum Transport in Semiconductor Devices

Author: DAVID K. ORIOLS FERRY (PROFESSOR XAVIER. WEINBUB, PROFESSOR JOSEF.)

Publisher: IOP ebooks

Published: 2023-11-21

Total Pages: 0

ISBN-13: 9780750352345

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This reference text presents a thorough discussion of the interface between quantum mechanics and real-world device simulation with an emphasis on the use of particles in the simulation.

Quantum Transport in Ultrasmall Devices
Quantum Transport in Ultrasmall Devices

Author: David K. Ferry

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 542

ISBN-13: 1461519675

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The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size

Topics in High Field Transport in Semiconductors
Topics in High Field Transport in Semiconductors

Author: Kevin F. Brennan

Publisher: World Scientific

Published: 2001

Total Pages: 270

ISBN-13: 9812799923

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This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field. Contents: Foreword (K F Brennan & P P Ruden); Quantum Transport in Semiconductor Devices (D K Ferry et al.); Quantum Transport and Its Simulation with the Wigner-Function Approach (C Jacoboni et al.); Bloch Dynamics in Spatially Local Inhomogeneous Electric Fields (J P Reynolds et al.); Collision Broadening Through Sequences of Scattering Events: Theory, Consequences and Modeling Within Semiclassical Monte Carlo (L F Register & B Fisher); Transport in a Polarization-Induced 2D Electron Gas (B K Ridley & N A Zakhleniuk); Impact Ionization and High Field Effects in Wide Band Gap Semiconductors (M Reigrotzki et al.); Simulation of Carrier Transport in Wide Band Gap Semiconductors (E Bellotti et al.); Electrical Transport in Organic Semiconductors (I H Campbell & D L Smith). Readership: Researchers and graduate students in the field of semiconductors.