Electronic Transport in Mesoscopic Systems
Electronic Transport in Mesoscopic Systems

Author: Supriyo Datta

Publisher: Cambridge University Press

Published: 1997-05-15

Total Pages: 398

ISBN-13: 1139643010

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Advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron. This book gives a thorough account of the theory of electronic transport in such mesoscopic systems. After an initial chapter covering fundamental concepts, the transmission function formalism is presented, and used to describe three key topics in mesoscopic physics: the quantum Hall effect; localisation; and double-barrier tunnelling. Other sections include a discussion of optical analogies to mesoscopic phenomena, and the book concludes with a description of the non-equilibrium Green's function formalism and its relation to the transmission formalism. Complete with problems and solutions, the book will be of great interest to graduate students of mesoscopic physics and nanoelectronic device engineering, as well as to established researchers in these fields.

Research in Progress
Research in Progress

Author: United States. Army Research Office

Publisher:

Published: 1984

Total Pages: 284

ISBN-13:

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Vols. for 1977- consist of two parts: Chemistry, biological sciences, engineering sciences, metallurgy and materials science (issued in the spring); and Physics, electronics, mathematics, geosciences (issued in the fall).

Sub-Micron Semiconductor Devices
Sub-Micron Semiconductor Devices

Author: Ashish Raman

Publisher: CRC Press

Published: 2022-05-10

Total Pages: 410

ISBN-13: 1000577236

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This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques. The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.

Quantum Transport in Semiconductors
Quantum Transport in Semiconductors

Author: David K. Ferry

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 311

ISBN-13: 1489923594

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The majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied fields. These fields are most likely to be strongly varying in both space and time. Most of the literature on quantum transport in semiconductors (or in metallic systems, for that matter) is restricted to the equilibrium approach, in which spectral densities are maintained as semiclassical energy conserving delta functions, or perhaps incorporating some form of collision broadening through a Lorentzian shape, and the distribution functions are kept in the equilibrium Fermi-Dirac form. The most familiar field of nonequilibrium transport, at least for the semiconductor world, is that of hot carriers in semiconductors.

Condensed Matter Physics
Condensed Matter Physics

Author: Michael P. Marder

Publisher: John Wiley & Sons

Published: 2010-11-17

Total Pages: 985

ISBN-13: 0470949945

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Now updated—the leading single-volume introduction to solid state and soft condensed matter physics This Second Edition of the unified treatment of condensed matter physics keeps the best of the first, providing a basic foundation in the subject while addressing many recent discoveries. Comprehensive and authoritative, it consolidates the critical advances of the past fifty years, bringing together an exciting collection of new and classic topics, dozens of new figures, and new experimental data. This updated edition offers a thorough treatment of such basic topics as band theory, transport theory, and semiconductor physics, as well as more modern areas such as quasicrystals, dynamics of phase separation, granular materials, quantum dots, Berry phases, the quantum Hall effect, and Luttinger liquids. In addition to careful study of electron dynamics, electronics, and superconductivity, there is much material drawn from soft matter physics, including liquid crystals, polymers, and fluid dynamics. Provides frequent comparison of theory and experiment, both when they agree and when problems are still unsolved Incorporates many new images from experiments Provides end-of-chapter problems including computational exercises Includes more than fifty data tables and a detailed forty-page index Offers a solutions manual for instructors Featuring 370 figures and more than 1,000 recent and historically significant references, this volume serves as a valuable resource for graduate and undergraduate students in physics, physics professionals, engineers, applied mathematicians, materials scientists, and researchers in other fields who want to learn about the quantum and atomic underpinnings of materials science from a modern point of view.

Introduction to the Physics of Electron Emission
Introduction to the Physics of Electron Emission

Author: Kevin L. Jensen

Publisher: John Wiley & Sons

Published: 2017-09-27

Total Pages: 1305

ISBN-13: 1119051762

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A practical, in-depth description of the physics behind electron emission physics and its usage in science and technology Electron emission is both a fundamental phenomenon and an enabling component that lies at the very heart of modern science and technology. Written by a recognized authority in the field, with expertise in both electron emission physics and electron beam physics, An Introduction to Electron Emission provides an in-depth look at the physics behind thermal, field, photo, and secondary electron emission mechanisms, how that physics affects the beams that result through space charge and emittance growth, and explores the physics behind their utilization in an array of applications. The book addresses mathematical and numerical methods underlying electron emission, describing where the equations originated, how they are related, and how they may be correctly used to model actual sources for devices using electron beams. Writing for the beam physics and solid state communities, the author explores applications of electron emission methodology to solid state, statistical, and quantum mechanical ideas and concepts related to simulations of electron beams to condensed matter, solid state and fabrication communities. Provides an extensive description of the physics behind four electron emission mechanisms—field, photo, and secondary, and how that physics relates to factors such as space charge and emittance that affect electron beams. Introduces readers to mathematical and numerical methods, their origins, and how they may be correctly used to model actual sources for devices using electron beams Demonstrates applications of electron methodology as well as quantum mechanical concepts related to simulations of electron beams to solid state design and manufacture Designed to function as both a graduate-level text and a reference for research professionals Introduction to the Physics of Electron Emission is a valuable learning tool for postgraduates studying quantum mechanics, statistical mechanics, solid state physics, electron transport, and beam physics. It is also an indispensable resource for academic researchers and professionals who use electron sources, model electron emission, develop cathode technologies, or utilize electron beams.

Introduction to Semiconductor Device Modelling
Introduction to Semiconductor Device Modelling

Author: Christopher M. Snowden

Publisher: World Scientific

Published: 1998

Total Pages: 242

ISBN-13: 9789810236939

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This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.