C, H, N and O in Si and Characterization and Simulation of Materials and Processes
C, H, N and O in Si and Characterization and Simulation of Materials and Processes

Author: A. Borghesi

Publisher: Newnes

Published: 2012-12-02

Total Pages: 580

ISBN-13: 044459633X

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Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Early Stages of Oxygen Precipitation in Silicon
Early Stages of Oxygen Precipitation in Silicon

Author: R. Jones

Publisher: Springer Science & Business Media

Published: 2013-11-11

Total Pages: 535

ISBN-13: 9400903553

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It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.

Oxygen in Silicon
Oxygen in Silicon

Author:

Publisher: Academic Press

Published: 1994-08-15

Total Pages: 711

ISBN-13: 0080864392

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This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Comprehensive study of the behavior of oxygen in silicon Discusses silicon crystals for VLSI and ULSI applications Thorough coverage from crystal growth to device fabrication Edited by technical experts in the field Written by recognized authorities from industrial and academic institutions Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research 297 original line drawings

From Physics to Devices: Light Emissions in Silicon
From Physics to Devices: Light Emissions in Silicon

Author:

Publisher: Academic Press

Published: 1997-11-14

Total Pages: 369

ISBN-13: 0080864465

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Carbon, Oxygen and Their Interaction with Intrinsic Point Defects in Solar Silicon Ribbon Material. Annual Report, September 1982-September 1983
Carbon, Oxygen and Their Interaction with Intrinsic Point Defects in Solar Silicon Ribbon Material. Annual Report, September 1982-September 1983

Author:

Publisher:

Published: 1983

Total Pages:

ISBN-13:

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This report first provides some background information on intrinsic point defects, and on carbon and oxygen in silicon in so far as it may be relevant for the efficiency of solar cells fabricated from EFG ribbon material. We discuss the co-precipitation of carbon and oxygen and especially of carbon and silicon self interstitials. A simple model for the electrical activity of carbon-self-interstitial agglomerates is presented. We assume that the self-interstitial content of these agglomerates determines their electrical activity and that both compressive stresses (high self-interstitial content) and tensile stresses (low self-interstitial content) give rise to electrical activity of the agglomerates. The self-interstitial content of these carbon-related agglomerates may be reduced by an appropriate high-temperature treatment and enhanced by a supersaturation of self-interstitials generated during formation of the p-n junction of solar cells. It is suggested that oxygen present in supersaturation in carbon-rich silicon may be induced to form SiO2 precipitates by self-interstitials generated during phosphorus diffusion. It is proposed that the SiO2-Si interface of the precipates gives rise to a continuum of donor states and that these interface states are responsible for at least part of the light-enhancement effects observed in oxygen containing EFG silicon after phosphorus diffusion.

Light Emission from Silicon
Light Emission from Silicon

Author: Aldo Ferrari

Publisher: Scitec Publications

Published: 1997

Total Pages: 158

ISBN-13:

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This volume presents the most recent results concerning the various approaches to obtaining light emission from silicon.