This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.
This Special Issue on Functional Oxide-Based Thin-Film Materials touches on the latest advancements in several aspects related to material science: the synthesis of novel oxide, photoluminescence characteristics, photocatalytic ability, energy storage, light emitter studies, low-emissivity glass coatings, and investigations of both nanostructure and thin-film properties. It represents an amalgamation of specialists working with device applications and shedding light on the properties and behavior of thin-film oxides (e.g., GaOx, Ga2O3, HfO2, LiNbO3, and doped ZnO, among numerous others). The papers cover many aspects of thin-film science and technology, from thin film to nanostructure and from material properties to optoelectronic applications, thus reflecting the many interests of the community of scientists active in the field.
Silicon has been proven to be remarkably resilient as a commercial electronic material. The microelectronics industry has harnessed nanotechnology to continually push the performance limits of silicon devices and integrated circuits. Rather than shrinking its market share, silicon is displacing “competitor” semiconductors in domains such as high-frequency electronics and integrated photonics. There are strong business drivers underlying these trends; however, an important contribution is also being made by research groups worldwide, who are developing new configurations, designs, and applications of silicon-based nanoscale and nanostructured materials. This Special Issue features a selection of papers which illustrate recent advances in the preparation of chemically or physically engineered silicon-based nanostructures and their application in electronic, photonic, and mechanical systems.
MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.
This book gives the first systematic and complete survey of technology and application of amorphous silicon, a material with a huge potential in electronic applications. The book features contributions by world-wide leading researchers in this field.
