GaN-based Materials and Devices
GaN-based Materials and Devices

Author: Michael Shur

Publisher: World Scientific

Published: 2004

Total Pages: 295

ISBN-13: 9812388443

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The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8
State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8

Author: J. Wang

Publisher: The Electrochemical Society

Published: 2007

Total Pages: 300

ISBN-13: 156677571X

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This issue contains the proceedings of both invited and contributed talks at the 47th State-Of-The-Art Programs on Compound Semiconductors (SOTAPOCS) symposium, and of the 8th Symposium on Wide Bandgap Semiconductors and Devices. The topics in this issue include some of the latest progress in compound and wide bandgap semiconductor development in fabrication processes, materials, characterization, devices, and reliability.

BioNanoFluidic MEMS
BioNanoFluidic MEMS

Author: Peter J. Hesketh

Publisher: Springer Science & Business Media

Published: 2007-11-15

Total Pages: 300

ISBN-13: 038746283X

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This book explains biosensor development fundamentals. It also initiates awareness in engineers and scientists who would like to develop and implement novel biosensors for agriculture, biomedicine, homeland security, environmental needs, and disease identification. In addition, the book introduces and lays the basic foundation for design, fabrication, testing, and implementation of next generation biosensors through hands-on learning.

Failure-Free Integrated Circuit Packages
Failure-Free Integrated Circuit Packages

Author: Charles Cohn

Publisher: McGraw Hill Professional

Published: 2005

Total Pages: 394

ISBN-13: 9780071434843

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The shrinking of integrated circuits (ICs) puts tremendous stress on overall device reliability. This unique treatment uses graphic illustration to clearly identify all major failure mode types, so engineers can spot failures before they occur.

Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815
Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815

Author: Michael Dudley

Publisher: Cambridge University Press

Published: 2004-08-24

Total Pages: 344

ISBN-13: 9781558997653

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Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300ºC, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.