A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.
Thin film mechanical behavior and stress presents a technological challenge for materials scientists, physicists and engineers. This book provides a comprehensive coverage of the major issues and topics dealing with stress, defect formation, surface evolution and allied effects in thin film materials. Physical phenomena are examined from the continuum down to the sub-microscopic length scales, with the connections between the structure of the material and its behavior described. Theoretical concepts are underpinned by discussions on experimental methodology and observations. Fundamental scientific concepts are embedded through sample calculations, a broad range of case studies with practical applications, thorough referencing, and end of chapter problems. With solutions to problems available on-line, this book will be essential for graduate courses on thin films and the classic reference for researchers in the field.
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A.
This new game book for understanding atoms at play aims to document diffusion processes and various other properties operative in advanced technological materials. Diffusion in functional organic chemicals, polymers, granular materials, complex oxides, metallic glasses, and quasi-crystals among other advanced materials is a highly interactive and synergic phenomenon. A large variety of atomic arrangements are possible. Each arrangement affects the performance of these advanced, polycrystalline multiphase materials used in photonics, MEMS, electronics, and other applications of current and developing interest. This book is written by pioneers in industry and academia for engineers, chemists, and physicists in industry and academia at the forefront of today's challenges in nanotechnology, surface science, materials science, and semiconductors.
Thin films of conducting materials, such as metals, alloys and semiconductors are currently in use in many areas of science and technology, particularly in modern integrated circuit microelectronics that require high quality thin films for the manufacture of connection layers, resistors and ohmic contacts. These conducting films are also important for fundamental investigations in physics, radio-physics and physical chemistry. Physical Properties of Thin Metal Films provides a clear presentation of the complex physical properties particular to thin conducting films and includes the necessary theory, confirming experiments and applications. The volume will be an invaluable reference for graduates, engineers and scientists working in the electronics industry and fields of pure and applied science.
Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
Due to their high energy conversion efficiencies and low emissions, Solid Oxide Fuel Cells (SOFCs) show promise as a replacement for combustion-based electrical generators at all sizes. Further increase of SOFC efficiency can be achieved by microstructural optimization of the oxygen-ion conducting electrolyte and the mixed ionic-electronic conducting cathode. By application of nanoscaled thin films, the exceptionally high efficiency allows the realization of mobile SOFCs.
This book is the third in a series of 4 books issued yearly as a deliverable of the research school established within the European Network of Excellence CMA (for Complex Metallic Alloys). It is written by reputed experts in the fields of surface physics and chemistry, metallurgy and process engineering, combining expertise found inside as well as outside the network.The CMA network focuses on the huge group of largely unknown multinary alloys and compounds formed with crystal structures based on giant unit cells containing clusters, with many tens or up to more than thousand atoms per unit cell. In these phases, for many phenomena, the physical length scales are substantially smaller than the unit-cell dimension. Hence, these materials offer unique combinations of properties, which are mutually excluded in conventional materials: metallic electric conductivity combined with low thermal conductivity, combination of good light absorption with high-temperature stability, combination of high metallic hardness with reduced wetting by liquids, electrical and thermal resistance tuneable by composition variation, excellent resistance to corrosion, reduced cold-welding and adhesion, enhanced hydrogen storage capacity and light absorption, etc.The series of books will concentrate on: development of fundamental knowledge with the aim of understanding materials phenomena, technologies associated with the production, transformation and processing of knowledge-based multifunctional materials, surface engineering, support for new materials development and new knowledge-based higher performance materials for macro-scale applications.
The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.
