Size-Dependent Optoelectronic Properties and Controlled Doping of Semiconductor Quantum Dots

Size-Dependent Optoelectronic Properties and Controlled Doping of Semiconductor Quantum Dots

Author: Jesse Hart Engel

Publisher:

Published: 2013

Total Pages: 107

ISBN-13:

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Given a rapidly developing world, the need exists for inexpensive renewable energy alternatives to help avoid drastic climate change. Photovoltaics have the potential to fill the energy needs of the future, but significant cost decreases are necessary for widespread adoption. Semiconductor nanocrystals, also known as quantum dots, are a nascent technology with long term potential to enable inexpensive and high efficiency photovoltaics. When de- posited as a film, quantum dots form unique nanocomposites whose electronic and optical properties can be broadly tuned through manipulation of their individual constituents. The contents of this thesis explore methods to understand and optimize the optoelectronic properties of PbSe quantum dot films for use in photovoltaic applications. Systematic optimization of photovoltaic performance is demonstrated as a function of nanocrystal size, establishing the potential for utilizing extreme quantum confinement to improve device energetics and alignment. Detailed investigations of the mechanisms of electrical transport are performed, revealing that electronic coupling in quantum dot films is significantly less than often assumed based on optical shifts. A method is proposed to employ extended regions of built-in electrical field, through controlled doping, to sidestep issues of poor transport. To this end, treatments with chemical redox agents are found to effect profound and reversible doping within nanocrystal films, sufficient to enable their use as chemical sensors, but lack- ing the precision required for optoelectronic applications. Finally, a novel doping method employing "redox buffers" is presented to enact precise, stable, and reversible charge-transfer doping in porous semiconductor films. An example of oxidatively doping PbSe quantum dot thin films is presented, and the future potential for redox buffers in photovoltaic applications is examined.


Complementary Tuning Semiconductor NCs Properties Using Precursor Reactivity, Doping, and Post-synthetic Modification

Complementary Tuning Semiconductor NCs Properties Using Precursor Reactivity, Doping, and Post-synthetic Modification

Author: Mohammad Sadegh Yadanparast

Publisher:

Published: 2018

Total Pages:

ISBN-13:

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Quantum dots are nanocrystalline semiconductors in which the size is so small that optoelectronic properties are size dependent. QDs have a lot of applications in displays, solar cells, lasers, light emitting diodes, etc. The optoelectronic properties of QDs depend on their size, composition, the shape of the particles and also the surface chemistry of the QDs. Phosphine based precursors have been mostly used in the synthesis of QDs. Due to the lack of tunable reactivity, this class of precursors, QDs with different shape are obtained by under different reaction conditions. With that, branched QDs are less likely to be obtained in one step reaction using phosphine based precursors. To synthesis QDs with a branched structure, in a single step synthesis, mixtures of precursors with different reactivity were used. Using dichalcogenides mixture, CdSe1-xSx hyperbranched supra-quantum dots (HSQDs) where synthesized in a one-step microwave-assisted synthesis and shape evolution mechanism of formation of NCs studied. It is shown that the NCs formed in three steps of nucleation, aggregation, and growth. By controlling the reaction conditions, simple branched tetrapod NCs are prepared, but the obtained NCs have no emission due to unpassivated surface and defects which work as trap. To obtain luminescent NCs obtained through doping. Hyperbranched Mn2+:ZnSe1-xSx NCs also prepared using a mixture of Ph2Se2 and Me2S2. The shape evolution mechanism of the formation of NCs was studied and it is shown that the NCs are formed via oriented attachment of initially formed nanoparticles. The NCs used for thiol sensing, and it observed that they have a better sensitivity and detection limit than spherical QDs. Although hyperbranched NCs have higher sensitivities over nonbranched NCs but, the spherical NCs have better detection limit and can dispersed in aqueous medium by ZnS shell growth followed by silica shell formation. To study the effect of ZnS shell thickness on sensing property of NCs, a set of spherical Mn:ZnSe@ZnS with different ZnS shell thickness were prepared and used for thiol sensing. It observed that in organic medium, thinner ZnS layer gives the highest sensitivity and QDs with thick ZnS shell layer have less sensitivity. For measurement in aqueous medium, QDs transferred to PBS buffer after formation of silica shell over QDs. It observed that NCs with a thin ZnS shell layer lose their emission and sensing completely. Thick ZnS shell protects NCs in the silica shell formation step but they show very low sensitivity to thiol compounds as well. ZnS shell with medium thickness gives the best sensitivity in an aqueous medium. The emission of Mn:ZnSe@ZnS QDs originated from d-d electron transition of Mn(II) ions and is independent to the size of QDs. To extend our study to QDs with band edge emission, preparation of luminescent InP QDs by post-synthetic modification is studied. InP NCs were synthesized using heat up method and successive injection of precursors. Narrow size distribution NCs obtained after size selection precipitation. Emissive NCs obtained after etching using InCl3 and fluoride containing salts. The study showed that more InCl3 case more etching and presence of fluoride-containing salt is necessary for band edge emission of the NCs.


Quantum Dot Optoelectronic Devices

Quantum Dot Optoelectronic Devices

Author: Peng Yu

Publisher: Springer Nature

Published: 2020-04-16

Total Pages: 329

ISBN-13: 3030358135

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This book captures cutting-edge research in semiconductor quantum dot devices, discussing preparation methods and properties, and providing a comprehensive overview of their optoelectronic applications. Quantum dots (QDs), with particle sizes in the nanometer range, have unique electronic and optical properties. They have the potential to open an avenue for next-generation optoelectronic methods and devices, such as lasers, biomarker assays, field effect transistors, LEDs, photodetectors, and solar concentrators. By bringing together leaders in the various application areas, this book is both a comprehensive introduction to different kinds of QDs with unique physical properties as well as their preparation routes, and a platform for knowledge sharing and dissemination of the latest advances in a novel area of nanotechnology.


Semiconductor Nanocrystals

Semiconductor Nanocrystals

Author: Alexander L. Efros

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 277

ISBN-13: 1475736770

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A physics book that covers the optical properties of quantum-confined semiconductor nanostructures from both the theoretical and experimental points of view together with technological applications. Topics to be reviewed include quantum confinement effects in semiconductors, optical adsorption and emission properties of group IV, III-V, II-VI semiconductors, deep-etched and self assembled quantum dots, nanoclusters, and laser applications in optoelectronics.


Optical Properties of Semiconductor Quantum Dots

Optical Properties of Semiconductor Quantum Dots

Author: Ulrike Woggon

Publisher: Springer

Published: 1997

Total Pages: 268

ISBN-13:

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This book presents an overview of the current understanding of the physics of zero-dimensional semiconductors. It concentrates mainly on quantum dots of wide-gap semiconductors, but touches also on zero-dimensional systems based on silicon and III-V materials. After providing the reader with a theoretical background, the author illustrates the specific properties of three-dimensionally confined semiconductors, such as the size dependence of energy states, optical transitions, and dephasing mechanisms with the results from numerous experiments in linear and nonlinear spectroscopy. Technological concepts of the growth concepts and the potential of this new class of semiconductor materials for electro-optic and nonlinear optical devices are also discussed.


Luminescence Spectroscopy of Semiconductors

Luminescence Spectroscopy of Semiconductors

Author: Ivan Pelant

Publisher: OUP Oxford

Published: 2012-02-02

Total Pages: 557

ISBN-13: 019162750X

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This book reviews up-to-date ideas of how the luminescence radiation in semiconductors originates and how to analyze it experimentally. The book fills a gap between general textbooks on optical properties of solids and specialized monographs on luminescence. It is unique in its coherent treatment of the phenomenon of luminescence from the very introductory definitions, from light emission in bulk crystalline and amorphous materials to the advanced chapters that deal with semiconductor nano objects, including spectroscopy of individual nanocrystals. The theory of radiative recombination channels in semiconductors is considered on a level of intuitive physical understanding rather than rigorous quantum mechanical treatment. The book is based on teaching and written in the style of a graduate text with plenty of tutorial material, illustrations, and problem sets at chapter ends. It is designed predominantly for students in physics, optics, optoelectronics and materials science.


Quantum Dot-single Wall Carbon Nanotube Complexes for Tunable Optoelectronic Microsystems Sensors

Quantum Dot-single Wall Carbon Nanotube Complexes for Tunable Optoelectronic Microsystems Sensors

Author: Brian J. Landi

Publisher:

Published: 2006

Total Pages: 396

ISBN-13:

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"Quantum dot-single wall carbon nanotube (QD-SWNT) complexes have been investigated for use in optoelectronic applications. Quantum confinement effects imbue size-dependent properties in nanomaterials which can be controlled during synthesis and exploited in devices. The physical properties inherent to semiconducting quantum dots (QDs) and single-wall carbon nanotubes (SWNTs) render their chemical combination a unique nanomaterial complex for Microsystems. Synthesis proficiency has been demonstrated for two techniques: (1) a pulsed laser vaporization process for SWNTs, and (2) wet chemistry colloidal approaches for CdSe and CuInS2 QDs. A significant fraction of the work in this Dissertation has been devoted to establishing standardized protocols for characterizing the nanomaterial properties using electron microscopy and spectroscopy. In the case of SWNTs, innovative methods have been developed to accurately assess the SWNT purity and monitor the purification steps during thermal oxidation. These results represent the first established metrics of reference for SWNT purity as well as unprecedented levels of purification efficiency. Experimental control over SWNT chiral distributions and QD particle diameter has shown where the size-dependent tunability of their optical bandgap can be used for selective absorption and emission based upon size and structure. Modification of the surface ligands on the QDs has facilitated an investigation of chemical attachment procedures to high purity SWNTs using covalent, electrostatic, and noncovalent reaction schemes. Polymeric photodiodes utilizing successful QD-SWNT complexes were fabricated and have shown the ability for select optical absorption, exciton dissociation, and charge transport. Thus, QD-SWNT complexes represent a new class of nanomaterials which are expected to impact Microsystems optoelectronic applications (e.g.color sensors, lab-on-a-chip spectrometry, smart pixels, etc.) due to wavelength selectivity, absorption sensitivity, and potential for nanoscale fabrication"--Abstract.


Semiconductor Quantum Dots

Semiconductor Quantum Dots

Author: Ladislaus B nyai

Publisher: World Scientific

Published: 1993

Total Pages: 264

ISBN-13: 9789810213909

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Semiconductor Quantum Dots presents an overview of the background and recent developments in the rapidly growing field of ultrasmall semiconductor microcrystallites, in which the carrier confinement is sufficiently strong to allow only quantized states of the electrons and holes. The main emphasis of this book is the theoretical analysis of the confinement induced modifications of the optical and electronic properties of quantum dots in comparison with extended materials. The book develops the theoretical background material for the analysis of carrier quantum-confinement effects, introduces the different confinement regimes for relative or center-of-mass motion quantization of the electron-hole-pairs, and gives an overview of the best approximation schemes for each regime. A detailed discussion of the carrier states in quantum dots is presented and surface polarization instabilities are analyzed, leading to the self-trapping of carriers near the surface of the dots. The influence of spin-orbit coupling on the quantum-confined carrier states is discussed. The linear and nonlinear optical properties of small and large quantum dots are studied in detail and the influence of the quantum-dot size distribution in many realistic samples is outlined. Phonons in quantum dots as well as the influence of external electric or magnetic fields are also discussed. Last but not least the recent developments dealing with regular systems of quantum dots are also reviewed. All things included, this is an important piece of work on semiconductor quantum dots not to be dismissed by serious researchers and physicists.


Core/Shell Quantum Dots

Core/Shell Quantum Dots

Author: Xin Tong

Publisher: Springer Nature

Published: 2020-07-01

Total Pages: 331

ISBN-13: 3030465969

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This book outlines various synthetic approaches, tuneable physical properties, and device applications of core/shell quantum dots (QDs). Core/shell QDs have exhibited enhanced quantum yield (QY), suppressed photobleaching/blinking, and significantly improved photochemical/physical stability as compared to conventional bare QDs. The core-shell structure also promotes the easy tuning of QDs’ band structure, leading to their employment as attractive building blocks in various optoelectronic devices. The main objective of this book is to create a platform for knowledge sharing and dissemination of the latest advances in novel areas of core/shell QDs and relevant devices, and to provide a comprehensive introduction and directions for further research in this growing area of nanomaterials research.