Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742

Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742

Author: Stephen E. Saddow

Publisher:

Published: 2003-03-25

Total Pages: 432

ISBN-13:

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Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.


Novel Materials and Processes for Advanced CMOS: Volume 745

Novel Materials and Processes for Advanced CMOS: Volume 745

Author: Mark I. Gardner

Publisher:

Published: 2003-03-25

Total Pages: 408

ISBN-13:

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Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.


Magnetoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization: Volume 746

Magnetoelectronics and Magnetic Materials - Novel Phenomena and Advanced Characterization: Volume 746

Author: Shufeng Zhang

Publisher:

Published: 2003-04

Total Pages: 306

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This book combines the proceedings of Symposium Q, Magnetoelectronics-Novel Magnetic Phenomena in Nanostructures, and Symposium R, Advanced Characterization of Artificially Structured Magnetic Materials, both from the 2002 MRS Fall Meeting in Boston. The common focus is on artificially engineered nanostructured magnetic systems. The two symposia address new phenomena in magnetoelectronic applications, their preparation, and advanced methodology for characterization. Interest in nanomagnetism has been catalyzed by advances in two fields of research. 1) Advances in materials synthesis of structures whose length scales transcend magnetic length scales and open the possibility for creating materials with new magnetic properties. Such structures include interfaces, superlattices, tunneling devices, nanostructures, and single-molecule magnets. 2) Advances in sample characterization techniques for nano-magnetism which allow detailed exploration of structure-property relationships in nanostructured magnetic systems. The volume highlights current trends in both fields and offers an outlook for further advances and new capabilities.


Molecularly Imprinted Materials--sensors and Other Devices

Molecularly Imprinted Materials--sensors and Other Devices

Author: Kenneth J. Shea

Publisher:

Published: 2002

Total Pages: 208

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This volume contains the proceedings of two symposia held at the 2002 MRS Spring Meeting in San Francisco. Molecular imprinting (MI) technology has attracted much attention and enjoyed tremendous development over the past decade. MI technology enables the preparation of materials with host sites that recognize specific guest molecules, analogous to the "lock-and-key" paradigm of antibodies and enzymes. Advantages of molecularly imprinted materials include: a degree of specificity approaching that of antibodies but with much greater temporal and thermal stability; rapid development because precise molecular design and chemical synthesis are unnecessary; and wide applicability because materials may be imprinted with almost any shape-persistent analyte of interest. Papers from Symposium M, "Molecularly Imprinted Materials, focus primarily on the fabrication of functional materials and devices based on MI materials. Studies are presented not only by experts in MI, but more importantly, by materials scientists integrating molecular imprinting with cutting-edge techniques in microfabrication and nanotechnology.


Solid-State Ionics - 2002: Volume 756

Solid-State Ionics - 2002: Volume 756

Author: Philippe Knauth

Publisher:

Published: 2003-04-17

Total Pages: 608

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.


Solid-State Chemistry of Inorganic Materials IV: Volume 755

Solid-State Chemistry of Inorganic Materials IV: Volume 755

Author: M. Á. Alario-Franco

Publisher:

Published: 2003-08-14

Total Pages: 512

ISBN-13:

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Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.


Materials and Devices for Optoelectronics and Microphotonics

Materials and Devices for Optoelectronics and Microphotonics

Author: Ralf B. Wehrspohn

Publisher:

Published: 2002

Total Pages: 520

ISBN-13:

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This volume combines the proceedings of Symposium K, Materials and Devices for Optoelectronics and Photonics, and Symposium L, Photonic Crystals--From Materials to Devices, both from the 2002 MRS Spring Meeting in San Francisco. The two symposia served as a unique meeting place where a community of materials scientists and device-oriented engineers could present their latest results. Papers from Symposium K concentrate on materials for solid-state lighting, with particular emphasis on nitrides and other high-bandgap semiconductors and quantum dots, as well as materials for optical waveguides and interconnects. Presentations from Symposium L discuss theoretical methods and materials and fabrication techniques for 2D and 3D photonic crystals, with special emphasis on tunability of photonic crystals.