This volume addresses the burgeoning field of wide band gap materials. The 64 contributed and invited papers will do much to stimulate the well-justified ongoing work, both theoretical and experimental, in this area. The high standard of the papers attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved.
This book contains the proceedings of 3 symposia dealing with various aspects of small scale structures. Symposium A deals with the development of new materials, including ceramics, polymers, metals, etc., their microstructuring as well as their potential for application in microsystems. All kinds of microsystems are considered, e.g. mechanical, magnetic, optical, chemical, biochemical and issues related to assembly and packaging were also covered.Symposium B deals with four topics: synthesis and preparation of nanostructured ceramics and composites with well-controlled geometric order and chemical composition; coupling of these structures to transducers for current and future chemical and biochemical devices based upon microoptics, microelectronics, microionics, microelectrodes or molecular cages; planar thin film structures and the control of covalent thin film/transducer couplings, the control of selective, stable and sensitive recognition centers at the surface, at grain boundaries or in the bulk of selected nanostructured materials with extremely narrow particle size distributions; analysis of these structures and sensor functions by means of techniques utilizing photons, electrons, ions, or atomic particle beam probes.Symposium E examines the structure-property relationships in thin films and multilayers, from the point of view of both fundamental studies and practical applications.
This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.
The chemical aspects of materials processing used for electronic applications, e.g. Si, III-V compounds, superconductors, metallization materials, are covered in this volume. Significant recent advances have occurred in the development of new volatile precursors for the fabrication of III-V semiconductor and metal [Cu, W] films by OMCVD. Some fundamentally new and wide-ranging applications have been introduced in recent times. Experimental and modeling studies regarding deposition kinetics, operating conditions and transport as well as properties of films produced by PVD, CVD and PECVD are discussed. The thirty papers in this volume report on many other significant topics also. Research workers involved in these aspects of materials technology may find here some new perspectives with which to augment their projects.
There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.
Single chamber processing has attracted the attention of a number of researchers as well as industries as an alternative processing "philosophy" to complement or even replace the stringent environment of micro- and optoelectronics device fabrication. Up till now single chamber processing has been an elusive manufacturing objective throughout the history of integrated circuit technology. With the emergence of integrated processing tools in recent years, significant segments for continuous fabrication processes have been successfully realised and their potential has already innovated the industry. The 14 papers in this volume cover topics such as: The background of this approach and up-dated status; Design and concepts of relevant cluster tools equipment; Specific process modules such as deposition chambers (CVD, RTCVD, UVCVD, ...) annealing or etching reactors; and Standardization efforts. The work will provide both a stimulus for future research in this field, as well as useful reference material on the new technology trends in microelectronic device manufacturing technology.
A wide range of progress in materials development [single crystals, ceramics, thin films, wire and tapes] is reported in the 169 papers in this volume. The main focus of the papers is in attaining a better understanding of the relationship between microstructure and electrical properties. Invited papers cover topics such as the effects of substitution and doping; multilayers; nanostructure characterisation; electric field effects in High Tc Superconductors [HTS]; surface stability; critical currents; flux pinning and magnetooptic imaging of flux patterns; effects of irradiation induced defects; properties and preparation of materials; microwave properties and electronic devices. A clearly broadened basis for understanding processes and mechanisms in [HTS] is portrayed. Appreciable progress has been achieved in the reproducible manufacturing of high quality materials supported by very efficient methods in microstructural analysis. This essential improvement is reflected in the increased number of practical devices encouraging the use of HTS in applications for electronics and power engineering, all of which are reviewed in depth in this work.
