Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610
Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610

Author: Aditya Agarwal

Publisher:

Published: 2001-04-09

Total Pages: 448

ISBN-13:

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This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.

Si Front-End Processing: Volume 669
Si Front-End Processing: Volume 669

Author: Erin C. Jones

Publisher: Cambridge University Press

Published: 2001-12-14

Total Pages: 358

ISBN-13: 9781558996052

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This book focuses on the phenomena which control the three-dimensional dopant profile in deep submicron devices. As device sizes continue to shrink, increasing the dopant activation while simultaneously decreasing the junction depth requires increasing control and understanding of dopant movement. As dopant diffusion and activation are determined by interactions with defects, other atoms, and interfaces, control of dopant behavior requires specific knowledge of these processes. To take advantage of atomistic simulation methods that can be used to model not only the dopant behaviors but now the properties of whole devices, high-precision advanced characterization techniques (e.g., two-dimensional junction profiling) are essential. These problems provide an excellent opportunity for researchers to share experimental results and physical models, demonstrate their importance to the technologies and identify key issues for future research in this field. Topics include: future device issues; advances in dopant profiling; dopant diffusion issues; dopant-defect clustering; dopant impurity effects; laser annealing; advances in RTA and simulation and modeling.

Si Front-End Processing: Volume 568
Si Front-End Processing: Volume 568

Author: Hans-Joachim L. Gossmann

Publisher: Cambridge University Press

Published: 1999-07-26

Total Pages: 0

ISBN-13: 9781558994751

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Electrical device parameters are largely set by the three-dimensional dopant profiles created during front-end processing. Ion implantation, silicidation and annealing treatments in various ambients influence the Si native point-defect populations in characteristic ways, so that the final dopant profile of a device is the result of complex interactions between dopant atoms, Si point defects and the various interfaces. These interactions can no longer be assumed to be at equilibrium and one-dimensional. This makes computer-aided technology development imperative, requiring accurate, truly predictive, physics-based process simulation tools. The reliability of these tools depends, in turn, on data from laboratory-scale experiments to motivate and validate the physical models. This book reviews developments in experiment and modelling, and identifies key issues for future research. It broadens the focus of earlier symposia from strictly TCAD issues, to include sections on 2-D profiling, SiGe and nitrogen, and by including a joint session with the 'Advanced Semiconductor Wafer Engineering' symposium titled Mechanisms of Point-Defect Interaction and Diffusion.

Si Front-End Processing: Volume 669
Si Front-End Processing: Volume 669

Author: Erin C. Jones

Publisher:

Published: 2001-12-14

Total Pages: 362

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Author: Peter Pichler

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 576

ISBN-13: 3709105978

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This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Simulation of Semiconductor Processes and Devices 2007
Simulation of Semiconductor Processes and Devices 2007

Author: Tibor Grasser

Publisher: Springer Science & Business Media

Published: 2007-11-18

Total Pages: 472

ISBN-13: 3211728619

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This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.

High Purity Silicon VI
High Purity Silicon VI

Author: Electrochemical Society. Meeting

Publisher: The Electrochemical Society

Published: 2000

Total Pages: 720

ISBN-13: 9781566772846

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"... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.

Simulation of Semiconductor Processes and Devices 2001
Simulation of Semiconductor Processes and Devices 2001

Author: Dimitris Tsoukalas

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 463

ISBN-13: 3709162440

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This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.