Semiconductor-On-Insulator Materials for Nanoelectronics Applications
Semiconductor-On-Insulator Materials for Nanoelectronics Applications

Author: Alexei Nazarov

Publisher: Springer Science & Business Media

Published: 2011-03-03

Total Pages: 437

ISBN-13: 3642158684

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"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.

Point Defects in Semiconductors and Insulators
Point Defects in Semiconductors and Insulators

Author: Johann-Martin Spaeth

Publisher: Springer Science & Business Media

Published: 2003-01-22

Total Pages: 508

ISBN-13: 9783540426950

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The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.

Introduction to Microelectronics to Nanoelectronics
Introduction to Microelectronics to Nanoelectronics

Author: Manoj Kumar Majumder

Publisher: CRC Press

Published: 2020-11-24

Total Pages: 373

ISBN-13: 1000223078

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Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.

Modelling of Interface Carrier Transport for Device Simulation
Modelling of Interface Carrier Transport for Device Simulation

Author: Dietmar Schroeder

Publisher: Springer Science & Business Media

Published: 2013-03-09

Total Pages: 234

ISBN-13: 3709166446

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This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.

Interlayer Dielectrics for Semiconductor Technologies
Interlayer Dielectrics for Semiconductor Technologies

Author: Shyam P Muraka

Publisher: Elsevier

Published: 2003-10-13

Total Pages: 459

ISBN-13: 0080521959

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Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package.* Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume* written by renowned experts in the field* Provides an up-to-date starting point in this young research field.

Handbook of Electromagnetic Materials
Handbook of Electromagnetic Materials

Author: P. S. Neelakanta

Publisher: CRC Press

Published: 1995-06-27

Total Pages: 616

ISBN-13: 9780849325007

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This Handbook explains basic concepts underlying electromagnetic properties of materials, addresses ways of deploying them in modern applications, and supplies pertinent data compiled for the first time in a single volume. Examples, including tables, charts, and graphs, are furnished from a practical applications view point of electromagnetic materials in various fields. These applications have grown enormously in recent years, pertinent to electromagnetic shields, radar absorbing materials, bioelectromagnetic phantoms, smart materials, electromagnetically active surfaces, exotic magnets, application-specific electrodes, and ferrites, etc.

Compound Semiconductor Bulk Materials and Characterizations
Compound Semiconductor Bulk Materials and Characterizations

Author: Osamu Oda

Publisher: World Scientific

Published: 2007

Total Pages: 556

ISBN-13: 9810217285

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This book is concerned with compound semiconductor bulk materials and has been written for students, researchers and engineers in material science and device fabrication. It offers them the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entering this field. In the first part, the book describes the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications. In the second and the third parts, the book reviews various compound semiconductor materials, including important industrial materials and the results of recent research.

Semiconductor Material and Device Characterization
Semiconductor Material and Device Characterization

Author: Dieter K. Schroder

Publisher: John Wiley & Sons

Published: 2015-06-29

Total Pages: 800

ISBN-13: 0471739065

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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Electronic Properties of Materials
Electronic Properties of Materials

Author: Rolf E. Hummel

Publisher: Springer Science & Business Media

Published: 2013-04-17

Total Pages: 323

ISBN-13: 3662024241

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The present book on electrical, optical, magnetic and thermal properties of materials is in many aspects different from other introductory texts in solid state physics. First of all, this book is written for engineers, particularly materials and electrical engineers who want to gain a fundamental under standing of semiconductor devices, magnetic materials, lasers, alloys, etc. Second, it stresses concepts rather than mathematical formalism, which should make the presentation relatively easy to understand. Thus, this book provides a thorough preparation for advanced texts, monographs, or special ized journal articles. Third, this book is not an encyclopedia. The selection oftopics is restricted to material which is considered to be essential and which can be covered in a 15-week semester course. For those professors who want to teach a two-semester course, supplemental topics can be found which deepen the understanding. (These sections are marked by an asterisk [*]. ) Fourth, the present text leaves the teaching of crystallography, X-ray diffrac tion, diffusion, lattice defects, etc. , to those courses which specialize in these subjects. As a rule, engineering students learn this material at the beginning of their upper division curriculum. The reader is, however, reminded of some of these topics whenever the need arises. Fifth, this book is distinctly divided into five self-contained parts which may be read independently.