Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
This volume represents the Proceedings of the Oji International Seminar on the Application of High Magnetic Fields in the Physics of Semiconductors and Magnetic Materials, which was held at the Hakone Kanko Hotel, Hakone, Japan, from 10 to 13 September 1980. The Seminar was organized as a related meeting to the 15th International Conference on the Physics of Semiconductors which was held in Kyoto between 1 and 5 September 1980. From 12 countries, 77 de legates participated in the Seminar. This Seminar was originally planned to be a formal series of International Conferences on the Application of High Magnetic Fields in the Physics of Semiconductors, which was first started by Professor G. Landwehr in 1972 in WUrzburg as a satellite conference to the 11th Semiconductor Conference in Warsaw. The Conference in WUrzburg was con ducted in an informal atmosphere which was followed by three conferences, in WUrzburg in 1974 and 1976, and in Oxford in 1978. At the current Seminar the physics of magnetic materials was added to the scope of the Seminar, because high-field magnetism is also an important research area in the physics of high magnetic fields and is also one of the most active fields in physics in Japan. In the last decade, considerable effort has been devoted to develop the techniques for generating the high magnetic fields in many high-field labora tories in the world.
A key source to journal and conference abbreviations in the sciences. Although it focuses on chemistry, other scientific and engineering disciplines are also well represented. In addition to the abbreviation and full title, each entry also contains publishing info, title changes, language and frequency of publication, and libraries owning that title. Over 130,000 entries representing more than 70,000 publications dating back to 1907 are included.
This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.
