Rare-Earth Doped Semiconductors II: Volume 422
Rare-Earth Doped Semiconductors II: Volume 422

Author: S. Coffa

Publisher:

Published: 1996

Total Pages: 392

ISBN-13:

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Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.

GaN and Related Materials II
GaN and Related Materials II

Author: Stephen J. Pearton

Publisher: CRC Press

Published: 2000-10-31

Total Pages: 718

ISBN-13: 1482298147

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The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microw

Compound Semiconductors 1998
Compound Semiconductors 1998

Author: H Sakaki

Publisher: CRC Press

Published: 2021-02-01

Total Pages: 931

ISBN-13: 1000157148

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Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.

Handbook on the Physics and Chemistry of Rare Earths
Handbook on the Physics and Chemistry of Rare Earths

Author:

Publisher: Elsevier

Published: 2003-06-19

Total Pages: 681

ISBN-13: 0080548571

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This volume of the Handbook illustrates the rich variety of topics covered by rare earth science. Three chapters are devoted to the description of solid state compounds: skutterudites (Chapter 211), rare earth -antimony systems (Chapter 212), and rare earth-manganese perovskites (Chapter 214). Two other reviews deal with solid state properties: one contribution includes information on existing thermodynamic data of lanthanide trihalides (Chapter 213) while the other one describes optical properties of rare earth compounds under pressure (Chapter 217). Finally, two chapters focus on solution chemistry. The state of the art in unraveling solution structure of lanthanide-containing coordination compounds by paramagnetic nuclear magnetic resonance is outlined in Chapter 215. The potential of time-resolved, laser-induced emission spectroscopy for the analysis of lanthanide and actinide solutions is presented and critically discussed in Chapter 216.

Processing of 'Wide Band Gap Semiconductors
Processing of 'Wide Band Gap Semiconductors

Author: S. J. Pearton

Publisher: Cambridge University Press

Published: 2013-01-15

Total Pages: 593

ISBN-13: 0080946755

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Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.

InP and Related Compounds
InP and Related Compounds

Author: M O Manasreh

Publisher: CRC Press

Published: 2000-08-08

Total Pages: 870

ISBN-13: 9789056992644

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InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.

Defects in Electronic Materials II: Volume 442
Defects in Electronic Materials II: Volume 442

Author: Jürgen Michel

Publisher:

Published: 1997-05-02

Total Pages: 744

ISBN-13:

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The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.