Quantum Transport in Semiconductor Submicron Structures
Quantum Transport in Semiconductor Submicron Structures

Author: B. Kramer

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 382

ISBN-13: 9400917600

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The articles in this book have been selected from the lectures of a NATO Advanced Study Institute held at Bad Lauterberg (Germany) in August 1995. Internationally well-known researchers in the field of mesoscopic quantum physics provide insight into the fundamental physics underlying the mesoscopic transport phenomena in structured semiconductor inversion layers. In addition, some of the most recent achievements are reported in contributed papers. The aim of the volume is not to give an overview over the field. Instead, emphasis is on interaction and correlation phenomena that turn out to be of increasing importance for the understanding of the phenomena in the quantum Hall regime, and in the transport through quantum dots. The present status of the quantum Hall experiments and theory is reviewed. As a "key example" for non-Fermi liquid behavior the Luttinger liquid is introduced, including some of the most recent developments. It is not only of importance for the fractional quantum Hall effect, but also for the understanding of transport in quantum wires. Furthermore, the chaotic and the correlation aspects of the transport in quantum dot systems are described. The status of the experimental work in the area of persistent currents in semiconductor systems is outlined. The construction of one of the first single-electron transistors is reported. The theoretical approach to mesoscopic transport, presently a most active area, is treated, and some aspects of time-dependent transport phenomena are also discussed.

Quantum Transport in Semiconductors
Quantum Transport in Semiconductors

Author: David K. Ferry

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 311

ISBN-13: 1489923594

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The majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied fields. These fields are most likely to be strongly varying in both space and time. Most of the literature on quantum transport in semiconductors (or in metallic systems, for that matter) is restricted to the equilibrium approach, in which spectral densities are maintained as semiclassical energy conserving delta functions, or perhaps incorporating some form of collision broadening through a Lorentzian shape, and the distribution functions are kept in the equilibrium Fermi-Dirac form. The most familiar field of nonequilibrium transport, at least for the semiconductor world, is that of hot carriers in semiconductors.

Electronic Quantum Transport in Mesoscopic Semiconductor Structures
Electronic Quantum Transport in Mesoscopic Semiconductor Structures

Author: Thomas Ihn

Publisher: Springer

Published: 2004-09-09

Total Pages: 270

ISBN-13: 0387218289

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Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.

Theory of Transport Properties of Semiconductor Nanostructures
Theory of Transport Properties of Semiconductor Nanostructures

Author: Eckehard Schöll

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 394

ISBN-13: 1461558077

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Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.

An Introduction to Quantum Transport in Semiconductors
An Introduction to Quantum Transport in Semiconductors

Author: David K. Ferry

Publisher: CRC Press

Published: 2017-12-14

Total Pages: 323

ISBN-13: 1351796372

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Throughout their college career, most engineering students have done problems and studies that are basically situated in the classical world. Some may have taken quantum mechanics as their chosen field of study. This book moves beyond the basics to highlight the full quantum mechanical nature of the transport of carriers through nanoelectronic structures. The book is unique in that addresses quantum transport only in the materials that are of interest to microelectronics—semiconductors, with their variable densities and effective masses. The author develops Green’s functions starting from equilibrium Green’s functions and going through modern time-dependent approaches to non-equilibrium Green’s functions, introduces relativistic bands for graphene and topological insulators and discusses the quantum transport changes that these bands induce, and discusses applications such as weak localization and phase breaking processes, resonant tunneling diodes, single-electron tunneling, and entanglement. Furthermore, he also explains modern ensemble Monte Carlo approaches to simulation of various approaches to quantum transport and the hydrodynamic approaches to quantum transport. All in all, the book describes all approaches to quantum transport in semiconductors, thus becoming an essential textbook for advanced graduate students in electrical engineering or physics.

Low-Dimensional Systems
Low-Dimensional Systems

Author: Tobias Brandes

Publisher: Springer

Published: 2008-01-11

Total Pages: 220

ISBN-13: 3540464387

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Experimental progress over the past few years has made it possible to test a n- ber of fundamental physical concepts related to the motion of electrons in low dimensions. The production and experimental control of novel structures with typical sizes in the sub-micrometer regime has now become possible. In parti- lar, semiconductors are widely used in order to con?ne the motion of electrons in two-dimensional heterostructures. The quantum Hall e?ect was one of the ?rst highlights of the new physics that is revealed by this con?nement. In a further step of the technological development in semiconductor-heterostructures, other arti?cial devices such as quasi one-dimensional ‘quantum wires’ and ‘quantum dots’ (arti?cial atoms) have also been produced. These structures again di?er very markedly from three- and two-dimensional systems, especially in relation to the transport of electrons and the interaction with light. Although the technol- ical advances and the experimental skills connected with these new structures are progressing extremely fast, our theoretical understanding of the physical e?ects (such as the quantum Hall e?ect) is still at a very rudimentary level. In low-dimensional structures, the interaction of electrons with one another and with other degrees of freedoms such as lattice vibrations or light gives rise to new phenomena that are very di?erent from those familiar in the bulk ma- rial. The theoretical formulation of the electronic transport properties of small devices may be considered well-established, provided interaction processes are neglected.

Quantum Dynamics of Submicron Structures
Quantum Dynamics of Submicron Structures

Author: Hilda A. Cerdeira

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 726

ISBN-13: 9401100195

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Techniques for the preparation of condensed matter systems have advanced considerably in the last decade, principally due to the developments in microfabrication technologies. The widespread availability of millikelvin temperature facilities also led to the discovery of a large number of new quantum phenomena. Simultaneously, the quantum theory of small condensed matter systems has matured, allowing quantitative predictions. The effects discussed in Quantum Dynamics of Submicron Structures include typical quantum interference phenomena, such as the Aharonov-Bohm-like oscillations of the magnetoresistance of thin metallic cylinders and rings, transport through chaotic billiards, and such quantization effects as the integer and fractional quantum Hall effect and the quantization of the conductance of point contacts in integer multiples of the `conductance quantum'. Transport properties and tunnelling processes in various types of normal metal and superconductor tunnelling systems are treated. The statistical properties of the quantum states of electrons in spatially inhomogeneous systems, such as a random, inhomogeneous magnetic field, are investigated. Interacting systems, like the Luttinger liquid or electrons in a quantum dot, are also considered. Reviews are given of quantum blockade mechanisms for electrons that tunnel through small junctions, like the Coulomb blockade and spin blockade, the influence of dissipative coupling of charge carriers to an environment, and Andreev scattering. Coulomb interactions and quantization effects in transport through quantum dots and in double-well potentials, as well as quantum effects in the motion of vortices, as in the Aharonov-Casher effect, are discussed. The status of the theory of the metal-insulator and superconductor-insulator phase transitions in ordered and disordered granular systems are reviewed as examples in which such quantum effects are of great importance.

Granular Nanoelectronics
Granular Nanoelectronics

Author: David K. Ferry

Publisher: Springer Science & Business Media

Published: 2013-12-14

Total Pages: 584

ISBN-13: 1489936890

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The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.

Solitons
Solitons

Author: R. MacKenzie

Publisher: Springer Science & Business Media

Published: 2000

Total Pages: 340

ISBN-13: 9780387988955

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Solitons were discovered by John Scott Russel in 1834 and have intrigued scientists and mathematicians ever since. They have been the subject of a large body of research not only in mathematics and physics, but also engineering, biology, and other disciplines. This volume comprises the presentations at an interdisciplinary workshop held at Querns University in Kingston, Ontario. It includes chapters on mathematical and numerical aspects of solitons, recent developments in string theory, and applications of solitons in such areas as nuclear and particle physics, cosmology, and condensed-matter physics.