Processes at the Semiconductor-Solution Interface 4

Processes at the Semiconductor-Solution Interface 4

Author: C. O'Dwyer

Publisher: The Electrochemical Society

Published: 2011-04

Total Pages: 236

ISBN-13: 1566778697

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The symposium consisted of four half-day sessions on topics at the forefront of semiconductor electrochemistry and solution-based processing including etching, patterning, passivation, porosity formation, electrochemical film growth, energy conversion materials, deposition, semiconductor surface functionalization, photoelectrochemical and optical properties, and other related processes. This issue of ECS Transactions contains 18 of the papers presented including invited papers by H. Föll (Christian-Albrechts University Kiel), J. N. Chazalviel (Ecole Polytechnique, CNRS), D. N. Buckley (University of Limerick, and Past President, ECS), J. D. Holmes (University College Cork), E. Chassaing (IRDEP, EDF-CNRS-ENSCP).


Processes at the Semiconductor Solution Interface 8

Processes at the Semiconductor Solution Interface 8

Author: C. O’Dwyer

Publisher: The Electrochemical Society

Published: 2019-05-17

Total Pages: 55

ISBN-13: 1607688697

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This issue of ECS Transactions includes papers based on presentations from the symposium "Processes at the Semiconductor Solution Interface 8," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.


State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2

State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2

Author: C. O'Dwyer

Publisher: The Electrochemical Society

Published: 2007

Total Pages: 647

ISBN-13: 1566775515

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Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.


Diffraction and Spectroscopic Methods in Electrochemistry

Diffraction and Spectroscopic Methods in Electrochemistry

Author: Richard C. Alkire

Publisher: John Wiley & Sons

Published: 2006-09-11

Total Pages: 456

ISBN-13: 9783527313174

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This ninth volume in the series concentrates on in situ spectroscopic methods and combines a balanced mixture of theory and applications, making it highly readable for chemists and physicists, as well as for materials scientists and engineers. As with the previous volumes, all the chapters continue the high standards of this series, containing numerous references to further reading and the original literature, for easy access to this new field. The editors have succeeded in selecting highly topical areas of research and in presenting authors who are leaders in their fields, covering such diverse topics as diffraction studies of the electrode-solution interface, thin organic films at electrode surfaces, linear and non-linear spectroscopy as well as sum frequency generation studies of the electrified solid-solution interface, plus quantitative SNIFTIRS and PM-IRRAS. Special attention is paid to recent advances and developments, which are critically and thoroughly discussed. The result is a compelling set of reviews, serving equally well as an excellent and up-to-date source of information for experienced researchers in the field, as well as as an introduction for newcomers.


Electrochemistry of Silicon and Its Oxide

Electrochemistry of Silicon and Its Oxide

Author: Xiaoge Gregory Zhang

Publisher: Springer Science & Business Media

Published: 2007-05-08

Total Pages: 525

ISBN-13: 0306479214

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It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.


Processing and Properties of Compound Semiconductors

Processing and Properties of Compound Semiconductors

Author:

Publisher: Elsevier

Published: 2001-10-20

Total Pages: 333

ISBN-13: 0080541011

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.


Micelles

Micelles

Author: Dinesh O. Shah

Publisher: CRC Press

Published: 1998-03-25

Total Pages: 634

ISBN-13: 9780824799908

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"Based on the plenary and invited lectures presented at the International Symposium on Micelles, Microemulsions, and Monolayers. Reviews the progress achieved in the last 25 years and describes new directions for research on micellar, microemulsion, and monolayer systems and their technological potential."