Progress in Fine Particle Plasmas
Progress in Fine Particle Plasmas

Author: Tetsu Mieno

Publisher: BoD – Books on Demand

Published: 2020-08-26

Total Pages: 228

ISBN-13: 1838804706

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In the field of plasma physics, plasmas (including charged fine particles) have been actively studied for more than 40 years, and special features of wave phenomena, self-organizations of the particles, potential formations, fluid-like motions of the particles, generations of fine particles in the plasmas, etc. have been investigated. Here, these plasmas are called “fine particle plasmas”, which are also called “dusty plasmas” and “complex plasmas”. This book intends to provide the reader with the recent progress of studies of fine particle plasmas from the viewpoints of wide and interdisciplinary directions, such as self-organized fine particles, Coulomb crystal formation, behaviors of fine particles, their stability, and syntheses of nano-sized particles in reactive plasmas. Further, the phenomena of dense grain particles and the effects of massive neutrinos in galaxy clustering are included.

Advanced Computing
Advanced Computing

Author: Michael Bader

Publisher: Springer Science & Business Media

Published: 2013-09-26

Total Pages: 255

ISBN-13: 3642387624

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This proceedings volume collects review articles that summarize research conducted at the Munich Centre of Advanced Computing (MAC) from 2008 to 2012. The articles address the increasing gap between what should be possible in Computational Science and Engineering due to recent advances in algorithms, hardware, and networks, and what can actually be achieved in practice; they also examine novel computing architectures, where computation itself is a multifaceted process, with hardware awareness or ubiquitous parallelism due to many-core systems being just two of the challenges faced. Topics cover both the methodological aspects of advanced computing (algorithms, parallel computing, data exploration, software engineering) and cutting-edge applications from the fields of chemistry, the geosciences, civil and mechanical engineering, etc., reflecting the highly interdisciplinary nature of the Munich Centre of Advanced Computing.

Nondestructive Characterization of Materials IV
Nondestructive Characterization of Materials IV

Author: J.F. Bussière

Publisher: Springer Science & Business Media

Published: 1992-02-29

Total Pages: 536

ISBN-13: 9780306440472

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There is a great deal of interest in extending nondestructive technologies beyond the location and identification of cracks and voids. Specifically there is growing interest in the application of nondestructive evaluation (NOEl to the measurement of physical and mechanical properties of materials. The measurement of materials properties is often referred to as materials characterization; thus nondestructive techniques applied to characterization become nondestructive characterization (NDCl. There are a number of meetings, proceedings and journals focused upon nondestructive technologies and the detection and identification of cracks and voids. However, the series of symposia, of which these proceedings represent the fourth, are the only meetings uniquely focused upon nondestructive characterization. Moreover, these symposia are especially concerned with stimulating communication between the materials, mechanical and manufacturing engineer and the NDE technology oriented engineer and scientist. These symposia recognize that it is the welding of these areas of expertise that is necessary for practical development and application of NDC technology to measurements of components for in service life time and sensor technology for intelligent processing of materials. These proceedings are from the fourth international symposia and are edited by c.o. Ruud, J. F. Bussiere and R.E. Green, Jr. . The dates, places, etc of the symposia held to date area as follows: Symposia on Nondestructive Methods for TITLE: Material Property Determination DATES: April 6-8, 1983 PLACE: Hershey, PA, USA CHAIRPERSONS: C.O. Ruud and R.E. Green, Jr.

MEMS and Microstructures in Aerospace Applications
MEMS and Microstructures in Aerospace Applications

Author: Robert Osiander

Publisher: CRC Press

Published: 2018-10-03

Total Pages: 400

ISBN-13: 1420027743

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The promise of MEMS for aerospace applications has been germinating for years, and current advances bring the field to the very cusp of fruition. Reliability is chief among the challenges limiting the deployment of MEMS technologies in space, as the requirement of zero failure during the mission is quite stringent for this burgeoning field. MEMS and Microstructures in Aerospace Applications provides all the necessary tools to overcome these obstacles and take MEMS from the lab bench to beyond the exosphere. The book begins with an overview of MEMS development and provides several demonstrations of past and current examples of MEMS in space. From this platform, the discussion builds to fabrication technologies; the effect of space environmental factors on MEMS devices; and micro technologies for space systems, instrumentation, communications, thermal control, guidance navigation and control, and propulsion. Subsequent chapters explore factors common to all of the described systems, such as MEMS packaging, handling and contamination control, material selection for specific applications, reliability practices for design and application, and assurance practices. Edited and contributed by an outstanding team of leading experts from industry, academia, and national laboratories, MEMS and Microstructures in Aerospace Applications illuminates the path toward qualifying and integrating MEMS devices and instruments into future space missions and developing innovative satellite systems.

Nanostructure Science and Technology
Nanostructure Science and Technology

Author: Richard W. Siegel

Publisher: Springer Science & Business Media

Published: 1999-09-30

Total Pages: 378

ISBN-13: 9780792358541

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Timely information on scientific and engineering developments occurring in laboratories around the world provides critical input to maintaining the economic and technological strength of the United States. Moreover, sharing this information quickly with other countries can greatly enhance the productivity of scientists and engineers. These are some of the reasons why the National Science Foundation (NSF) has been involved in funding science and technology assessments comparing the United States and foreign countries since the early 1980s. A substantial number of these studies have been conducted by the World Technology Evaluation Center (WTEC) managed by Loyola College through a cooperative agreement with NSF. The National Science and Technology Council (NSTC), Committee on Technology's Interagency Working Group on NanoScience, Engineering and Technology (CT/IWGN) worked with WTEC to develop the scope of this Nanostucture Science and Technology report in an effort to develop a baseline of understanding for how to strategically make Federal nanoscale R&D investments in the coming years. The purpose of the NSTC/WTEC activity is to assess R&D efforts in other countries in specific areas of technology, to compare these efforts and their results to U. S. research in the same areas, and to identify opportunities for international collaboration in precompetitive research. Many U. S. organizations support substantial data gathering and analysis efforts focusing on nations such as Japan. But often the results of these studies are not widely available. At the same time, government and privately sponsored studies that are in the public domain tend to be "input" studies.

BSIM4 and MOSFET Modeling for IC Simulation
BSIM4 and MOSFET Modeling for IC Simulation

Author: Weidong Liu

Publisher: World Scientific

Published: 2011

Total Pages: 435

ISBN-13: 9812813993

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This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

Modern Semiconductor Devices for Integrated Circuits
Modern Semiconductor Devices for Integrated Circuits

Author: Chenming Hu

Publisher: Prentice Hall

Published: 2010

Total Pages: 387

ISBN-13: 0136085253

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Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers. "

MOSFET Modeling & BSIM3 User’s Guide
MOSFET Modeling & BSIM3 User’s Guide

Author: Yuhua Cheng

Publisher: Springer Science & Business Media

Published: 2007-05-08

Total Pages: 467

ISBN-13: 0306470500

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Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.