Masters Theses in the Pure and Applied Sciences

Masters Theses in the Pure and Applied Sciences

Author: Wade H. Shafer

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 350

ISBN-13: 1461528321

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Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 36 (thesis year 1991) a total of 11,024 thesis titles from 23 Canadian and 161 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 36 reports theses submitted in 1991, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.


Plasma Etch Characteristics of Nitrogen Trifluoride Gas Mixtures

Plasma Etch Characteristics of Nitrogen Trifluoride Gas Mixtures

Author: John A. Barkanic

Publisher:

Published: 2004

Total Pages:

ISBN-13:

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Plasma etching was investigated using NF3 mixtures to generate a low-pressure reactive plasma. Nitrogen trifluoride was mixed with combinations of argon, CF2Cl2 or chlorine. Plasma pressure, power density and chemical composition were varied. Silicon and silicon dioxide reaction rates and silicon to silicon dioxide reaction selectivity were established. The etch anisotropy obtained from a patterning process was also investigated.


Si Silicon

Si Silicon

Author: Eberhard F. Krimmel

Publisher: Springer Science & Business Media

Published: 2013-11-11

Total Pages: 417

ISBN-13: 3662099012

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This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.