Plasma Etching of Silicon, Silicon Nitride, and Amorphous Silicon Using Nitrogen Trifluoride
Author: Say Meng Tan
Publisher:
Published: 1990
Total Pages: 206
ISBN-13:
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Author: Say Meng Tan
Publisher:
Published: 1990
Total Pages: 206
ISBN-13:
DOWNLOAD EBOOKAuthor: Kevin Lee Richter
Publisher:
Published: 1980
Total Pages: 76
ISBN-13:
DOWNLOAD EBOOKAuthor: Hua Chun Shi
Publisher:
Published: 1998
Total Pages: 0
ISBN-13:
DOWNLOAD EBOOKAuthor: Wade H. Shafer
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 350
ISBN-13: 1461528321
DOWNLOAD EBOOKMasters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 36 (thesis year 1991) a total of 11,024 thesis titles from 23 Canadian and 161 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 36 reports theses submitted in 1991, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Author: Gregory Costrini
Publisher:
Published: 1983
Total Pages: 58
ISBN-13:
DOWNLOAD EBOOKAuthor: Puthajat Machima
Publisher:
Published: 2005
Total Pages: 288
ISBN-13:
DOWNLOAD EBOOKAuthor: John A. Barkanic
Publisher:
Published: 2004
Total Pages:
ISBN-13:
DOWNLOAD EBOOKPlasma etching was investigated using NF3 mixtures to generate a low-pressure reactive plasma. Nitrogen trifluoride was mixed with combinations of argon, CF2Cl2 or chlorine. Plasma pressure, power density and chemical composition were varied. Silicon and silicon dioxide reaction rates and silicon to silicon dioxide reaction selectivity were established. The etch anisotropy obtained from a patterning process was also investigated.
Author: Eberhard F. Krimmel
Publisher: Springer Science & Business Media
Published: 2013-11-11
Total Pages: 417
ISBN-13: 3662099012
DOWNLOAD EBOOKThis is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
Author: G. S. Mathad
Publisher: The Electrochemical Society
Published: 2000
Total Pages: 396
ISBN-13: 9781566772532
DOWNLOAD EBOOKAuthor: Pablo Torres
Publisher:
Published: 1998
Total Pages: 118
ISBN-13:
DOWNLOAD EBOOKStudies the reactive ion etching technique and develops a reactive ion etching process of silicon carbide using pure nitrogen trifluoride gas.