Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation.Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
This book covers all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the book is on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called ""war stories"", to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language.
Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.
Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.
The first edition of this title has become a well-known reference book on ion sources. The field is evolving constantly and rapidly, calling for a new, up-to-date version of the book. In the second edition of this significant title, editor Ian Brown, himself an authority in the field, compiles yet again articles written by renowned experts covering various aspects of ion source physics and technology. The book contains full chapters on the plasma physics of ion sources, ion beam formation, beam transport, computer modeling, and treats many different specific kinds of ion sources in sufficient detail to serve as a valuable reference text.
Recent scientific and technical advances have made it possible to create matter in the laboratory under conditions relevant to astrophysical systems such as supernovae and black holes. These advances will also benefit inertial confinement fusion research and the nation's nuclear weapon's program. The report describes the major research facilities on which such high energy density conditions can be achieved and lists a number of key scientific questions about high energy density physics that can be addressed by this research. Several recommendations are presented that would facilitate the development of a comprehensive strategy for realizing these research opportunities.
Nonlinear Wave and Plasma Structures in the Auroral and Subauroral Geospace presents a comprehensive examination of the self-consistent processes leading to multiscale electromagnetic and plasma structures in the magnetosphere and ionosphere near the plasmapause, particularly in the auroral and subauroral geospace. It utilizes simulations and a large number of relevant in situ measurements conducted by the most recent satellite missions, as well as ground-based optical and radar observations to verify the conclusions and analysis. Including several case studies of observations related to prominent geospacer events, the book also provides experimental and numerical results throughout the chapters to further enhance understanding of how the same physical mechanisms produce different phenomena at different regions of the near-Earth space environment. Additionally, the comprehensive description of mechanisms responsible for space weather effects will give readers a broad foundation of wave and particle processes in the near-Earth magnetosphere. As such, Nonlinear Wave and Plasma Structures in the Auroral and Subauroral Geospace Nonlinear Wave and Plasma Structures in the Auroral and Subauroral Geospace is a cutting-edge reference for space physicists looking to better understand plasma physics in geospace. - Presents a unified approach to wave and particle phenomena occurring in the auroral and subauroral geospace - Summarizes the most current theoretical concepts related to the generation of the large-scale electric field near the plasmapause by flows of hot plasma from the reconnection site - Includes case studies of the observations related to the most "famous events during the last 20 years as well as a large number of experimental and numerical results illustrated throughout the text
An understanding of the processes involved in the basic and applied physics and chemistry of the interaction of plasmas with materials is vital to the evolution of technologies such as those relevant to microelectronics, fusion and space. The subjects dealt with in the book include: the physics and chemistry of plasmas, plasma diagnostics, physical sputtering and chemical etching, plasma assisted deposition of thin films, ion and electron bombardment, and plasma processing of inorganic and polymeric materials. The book represents a concentration of a substantial amount of knowledge acquired in this area - knowledge which was hitherto widely scattered throughout the literature - and thus establishes a baseline reference work for both established and tyro research workers.
