Physical Properties of III-V Semiconductor Compounds
Physical Properties of III-V Semiconductor Compounds

Author: Sadao Adachi

Publisher: John Wiley & Sons

Published: 1992-11-10

Total Pages: 342

ISBN-13: 9780471573296

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The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Fundamentals of Semiconductors
Fundamentals of Semiconductors

Author: Peter YU

Publisher: Springer Science & Business Media

Published: 2007-05-08

Total Pages: 651

ISBN-13: 3540264752

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Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.

Handbook Series on Semiconductor Parameters
Handbook Series on Semiconductor Parameters

Author: M. Levinshtein

Publisher: World Scientific

Published: 1999

Total Pages: 224

ISBN-13: 9812832084

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The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.

Properties of Semiconductor Alloys
Properties of Semiconductor Alloys

Author: Sadao Adachi

Publisher: John Wiley & Sons

Published: 2009-03-12

Total Pages: 422

ISBN-13: 9780470744390

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The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.

Properties of Advanced Semiconductor Materials
Properties of Advanced Semiconductor Materials

Author: Michael E. Levinshtein

Publisher: John Wiley & Sons

Published: 2001-02-21

Total Pages: 220

ISBN-13: 9780471358275

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Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.

Progress in Inorganic Chemistry
Progress in Inorganic Chemistry

Author: Kenneth D. Karlin

Publisher: John Wiley & Sons

Published: 2005-06-14

Total Pages: 544

ISBN-13: 0471725552

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The cutting edge of scientific reporting . . . PROGRESS in Inorganic Chemistry Nowhere is creative scientific talent busier than in the world ofinorganic chemistry experimentation. Progress in InorganicChemistry continues in its tradition of being the most respectedavenue for exchanging innovative research. This series providesinorganic chemists and materials scientists with a forum forcritical, authoritative evaluations of advances in every area ofthe discipline. With contributions from internationally renownedchemists, this latest volume offers an in-depth, far-rangingexamination of the changing face of the field, providing atantalizing glimpse of the emerging state of the science. "This series is distinguished not only by its scope and breadth,but also by the depth and quality of the reviews." -Journal of the American Chemical Society "[This series] has won a deservedly honored place on the bookshelfof the chemist attempting to keep afloat in the torrent of originalpapers on inorganic chemistry." -Chemistry in Britain CONTENTS OF VOLUME 54 * Atomlike Building Units of Adjustable Character: Solid-State andSolution Routes to Manipulating Hexanuclear Transition MetalChalcohalide Clusters (Eric J. Welch and Jeffrey R. Long) * Doped Semiconductor Nanocrystals: Synthesis, Characterization,Physical Properties, and Applications (J. Daniel Bryan and DanielR. Gamelin) * Stereochemical Aspects of Metal Xanthane Complexes: MolecularStructures and Supramolecular Self-Assembly (Edward R. T. Tiekinkand Ionel Haiduc) * Trivalent Uranium: A Versatile Species for Molecular Activation(Ilia Korobkov and Sandro Gambarotta) * Comparison of the Chemical Biology of NO and HNO: An InorganicPerspective (Katrina M. Miranda and David A. Wink) * Alterations of Nucleobase pKa Values upon Metal Coordination:Origins and Consequences (Bernhard Lippert) * Functionalization of Myoglobin (Yoshihito Watanabe and TakashiHayashi)

Electronic Properties of Doped Semiconductors
Electronic Properties of Doped Semiconductors

Author: B.I. Shklovskii

Publisher: Springer Science & Business Media

Published: 2013-11-09

Total Pages: 400

ISBN-13: 3662024039

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First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.