In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.
The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
The Electronics and Electrical Engineering Laboratory (EEEL), working in concert with other NIST Laboratories, is providing measurement and other generic technology critical to the competitiveness of the U.S. electronics industry and the U.S. electricity-equipment industry. This report summarizes selected technical accomplishments and describes activities conducted by the Lab in FY 1998. Also included are profiles of EEEL's organization, customer interactions, and long-term goals. Appendix includes crosswalk of EEEL programs and projects; EEEL FY1998 resources; EEEL FY1998 CRADAS; and EEEL organization chart.
Hosted by Harvard University's Kennedy School of Government, this symposium brought together leading technologists and economists to review technical challenges facing the semiconductor industry, the industry's business cycle, the interconnections between the two, and the implications of growth in semiconductors for the economy as a whole. This volume includes a summary of the symposium proceedings and three major research papers. Topics reviewed encompass the industry technology roadmap, challenges to be overcome to maintain the trajectory of Moore's Law, the drivers of the continued growth in productivity in the U.S. economy, and economic models for gaining a better understanding of this leading U.S. industry.
