II-VI Semiconductor Materials and their Applications
II-VI Semiconductor Materials and their Applications

Author: MariaC. Tamargo

Publisher: Routledge

Published: 2018-05-04

Total Pages: 240

ISBN-13: 1351439375

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II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors. Specifically, the growth, charactrtization, materials and device issues for these two applications are described. Emphasis is placed on the wide bandgap emitters where much progress has occurred recently.The book also presents new directions that have potential, future applications in optoelectronics for II-VI materials. In particular, it discusses the status of dilute magnetic semiconductors for mango-optical and electromagnetic devices, nonlinear optical properties, photorefractive effects and new materials and physics phenomena, such as self-organized, low-dimensional structures.II_VI Semiconductor Materials and Their Applications is a valuable reference book for researchers in the field as well as a textbook for materials science and applied physics courses.

Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors
Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors

Author: T.C. McGill

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 338

ISBN-13: 146845661X

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This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.

Wide Bandgap Semiconductors
Wide Bandgap Semiconductors

Author: Kiyoshi Takahashi

Publisher: Springer Science & Business Media

Published: 2007-04-12

Total Pages: 481

ISBN-13: 3540472355

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This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

Properties of Aluminium Gallium Arsenide
Properties of Aluminium Gallium Arsenide

Author: Sadao Adachi

Publisher: IET

Published: 1993

Total Pages: 354

ISBN-13: 9780852965580

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The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.

Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors
Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

Author: Ghenadii Korotcenkov

Publisher: Springer Nature

Published: 2023-04-20

Total Pages: 585

ISBN-13: 3031195310

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Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The first volume "Materials and Technologies" of a three-volume set describes the physical, chemical and electronic properties of II-VI compounds, which give rise to an increased interest in these semiconductors. Technologies that are used in the development of various devices based on II-VI connections, such as material synthesis, deposition, characterization, processing, and device fabrication, are also discussed in detail in this volume. It covers also topics related to synthesis and application of II-VI-based nanoparticles and quantum dots, as well their toxicity, biocompatibility and biofunctionalization.

Cumulative Subject and Author Index Including Tables of Contents, Volumes 1-50
Cumulative Subject and Author Index Including Tables of Contents, Volumes 1-50

Author:

Publisher: Academic Press

Published: 1998-09-15

Total Pages: 445

ISBN-13: 0080864511

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization

Author:

Publisher: Academic Press

Published: 1997-05-23

Total Pages: 321

ISBN-13: 0080864422

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Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Molecular Beam Epitaxy
Molecular Beam Epitaxy

Author: Mohamed Henini

Publisher: Elsevier

Published: 2018-06-27

Total Pages: 790

ISBN-13: 0128121378

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Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Advances in Research and Applications
Advances in Research and Applications

Author:

Publisher: Elsevier

Published: 1996-01-26

Total Pages: 517

ISBN-13: 0080865135

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Solid State Physics, Volume 49 continues the Series' tradition of excellence by focusing on the optical and electronic properties and applications of semiconductors. Three of the chapters deal with stress applications as well as the basic underlying science of semicondutors. All of the topics in this volume are at the cutting-edge of research in the semiconductor field and will be of great interest to the scientific community.

Luminescence of Solids
Luminescence of Solids

Author: D.R. Vij

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 435

ISBN-13: 146155361X

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Luminescence of Solids gathers together much of the latest work on luminescent inorganic materials and new physical phenomena. The volume includes chapters covering -- the achievements that have led to the establishment of the fundamental laws of luminescence -- light sources, light-dispersing elements, detectors, and other experimental techniques -- models and mechanisms -- materials preparation, and -- future trends. This international collection of cutting-edge luminescence research is complemented by over 170 illustrations that bring to life the text's many vital concepts.