Nonvolatile Memories 3
Author: S. Shingubara
Publisher: The Electrochemical Society
Published: 2014
Total Pages: 156
ISBN-13: 1607685515
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Emerging Non-Volatile Memories
Author: Seungbum Hong
Publisher: Springer
Published: 2014-11-18
Total Pages: 280
ISBN-13: 1489975373
DOWNLOAD EBOOKThis book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Advances in Non-volatile Memory and Storage Technology
Author: Yoshio Nishi
Publisher: Elsevier
Published: 2014-06-24
Total Pages: 456
ISBN-13: 0857098098
DOWNLOAD EBOOKNew solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Nonvolatile Memories
Author: Tseung-Yuen Tseng
Publisher:
Published: 2012
Total Pages:
ISBN-13: 9781588832504
DOWNLOAD EBOOKVLSI-Design of Non-Volatile Memories
Author: Giovanni Campardo
Publisher: Springer Science & Business Media
Published: 2005-01-18
Total Pages: 616
ISBN-13: 9783540201984
DOWNLOAD EBOOKVLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.
Nonvolatile Memory Technologies with Emphasis on Flash
Author: Joe Brewer
Publisher: John Wiley & Sons
Published: 2011-09-23
Total Pages: 766
ISBN-13: 1118211626
DOWNLOAD EBOOKPresented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.
Nonvolatile Memory Design
Author: Hai Li
Publisher: CRC Press
Published: 2017-12-19
Total Pages: 207
ISBN-13: 1351834193
DOWNLOAD EBOOKThe manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
Non-Volatile Memory Database Management Systems
Author: Joy Arulraj
Publisher: Springer Nature
Published: 2022-06-01
Total Pages: 173
ISBN-13: 3031018680
DOWNLOAD EBOOKThis book explores the implications of non-volatile memory (NVM) for database management systems (DBMSs). The advent of NVM will fundamentally change the dichotomy between volatile memory and durable storage in DBMSs. These new NVM devices are almost as fast as volatile memory, but all writes to them are persistent even after power loss. Existing DBMSs are unable to take full advantage of this technology because their internal architectures are predicated on the assumption that memory is volatile. With NVM, many of the components of legacy DBMSs are unnecessary and will degrade the performance of data-intensive applications. We present the design and implementation of DBMS architectures that are explicitly tailored for NVM. The book focuses on three aspects of a DBMS: (1) logging and recovery, (2) storage and buffer management, and (3) indexing. First, we present a logging and recovery protocol that enables the DBMS to support near-instantaneous recovery. Second, we propose a storage engine architecture and buffer management policy that leverages the durability and byte-addressability properties of NVM to reduce data duplication and data migration. Third, the book presents the design of a range index tailored for NVM that is latch-free yet simple to implement. All together, the work described in this book illustrates that rethinking the fundamental algorithms and data structures employed in a DBMS for NVM improves performance and availability, reduces operational cost, and simplifies software development.
Emerging Non-volatile Memory Technologies
Author: Wen Siang Lew
Publisher: Springer Nature
Published: 2021-01-09
Total Pages: 439
ISBN-13: 9811569126
DOWNLOAD EBOOKThis book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Error Correction Codes for Non-Volatile Memories
Author: Rino Micheloni
Publisher: Springer Science & Business Media
Published: 2008-06-03
Total Pages: 338
ISBN-13: 1402083912
DOWNLOAD EBOOKNowadays it is hard to find an electronic device which does not use codes: for example, we listen to music via heavily encoded audio CD's and we watch movies via encoded DVD's. There is at least one area where the use of encoding/decoding is not so developed, yet: Flash non-volatile memories. Flash memory high-density, low power, cost effectiveness, and scalable design make it an ideal choice to fuel the explosion of multimedia products, like USB keys, MP3 players, digital cameras and solid-state disk. In ECC for Non-Volatile Memories the authors expose the basics of coding theory needed to understand the application to memories, as well as the relevant design topics, with reference to both NOR and NAND Flash architectures. A collection of software routines is also included for better understanding. The authors form a research group (now at Qimonda) which is the typical example of a fruitful collaboration between mathematicians and engineers.
