Narrow-Gap Semiconductors
Author:
Publisher: Springer
Published: 2006-04-11
Total Pages: 317
ISBN-13: 3540395318
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Physics and Properties of Narrow Gap Semiconductors
Author: Junhao Chu
Publisher: Springer Science & Business Media
Published: 2007-11-21
Total Pages: 613
ISBN-13: 0387748016
DOWNLOAD EBOOKNarrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.
Narrow Gap Semiconductors
Author: Junichiro Kono
Publisher: CRC Press
Published: 2006-05-25
Total Pages: 636
ISBN-13: 148226921X
DOWNLOAD EBOOKThis volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.
Narrow-gap Semiconductor Photodiodes
Author: Antoni Rogalski
Publisher: SPIE Press
Published: 2000
Total Pages: 464
ISBN-13: 9780819436191
DOWNLOAD EBOOKIn this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
Narrow Gap Semiconductors Physics and Applications
Author: W. Zawadzki
Publisher: Springer
Published: 1980-10-01
Total Pages: 574
ISBN-13: 9783540102618
DOWNLOAD EBOOKProceedings of the International Summer School, held in Nimes, France, September, 3-15, 1979
Narrow Gap Semiconductors 1995
Author: J.L Reno
Publisher: CRC Press
Published: 2020-11-25
Total Pages: 401
ISBN-13: 1000112403
DOWNLOAD EBOOKNarrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Device Physics of Narrow Gap Semiconductors
Author: Junhao Chu
Publisher: Springer Science & Business Media
Published: 2009-10-13
Total Pages: 676
ISBN-13: 1441910409
DOWNLOAD EBOOKNarrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.
Applied Solid State Science
Author: Raymond Wolfe
Publisher: Academic Press
Published: 2013-10-22
Total Pages: 417
ISBN-13: 1483214702
DOWNLOAD EBOOKApplied Solid State Science: Advances in Materials and Device Research, Volume 1 presents articles about junction electroluminescence; metal-insulator-semiconductor (MIS) physics; ion implantation in semiconductors; and electron transport through insulating thin films. The book describes the basic physics of carrier injection; energy transfer and recombination mechanisms; state of the art efficiencies; and future prospects for light emitting diodes. The text then discusses solid state spectroscopy, which is the pair spectra observed in gallium phosphide photoluminescence. The extensive studies of MIS diodes that have led to detailed understanding of the silicon-silicon dioxide interface, as well as the devices that can be fabricated by ion implantation in semiconductors are also considered. The book further tackles fundamental mechanisms of electron transport through insulating thin films; mechanisms that influence the design of many thin film; and semiconductor devices. Solid state physicists, materials scientists, electrical engineers, and graduate students working near the subjects being discussed will find the book invaluable.
Narrow Gap Semiconductors 2007
Author: Ben Murdin
Publisher: Springer Science & Business Media
Published: 2008-11-30
Total Pages: 195
ISBN-13: 1402084250
DOWNLOAD EBOOKNarrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.
Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions
Author: Kazuto Akiba
Publisher: Springer
Published: 2019-04-04
Total Pages: 165
ISBN-13: 9811371075
DOWNLOAD EBOOKThis book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly understand the typical electronic character of narrow-gap semiconductor materials, which has recently attracted interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to understand the high magnetic field and pressure experiments.
