In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to stud
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays.
Written by hundreds experts who have made contributions to both enterprise and academics research, these excellent reference books provide all necessary knowledge of the whole industrial chain of integrated circuits, and cover topics related to the technology evolution trends, fabrication, applications, new materials, equipment, economy, investment, and industrial developments of integrated circuits. Especially, the coverage is broad in scope and deep enough for all kind of readers being interested in integrated circuit industry. Remarkable data collection, update marketing evaluation, enough working knowledge of integrated circuit fabrication, clear and accessible category of integrated circuit products, and good equipment insight explanation, etc. can make general readers build up a clear overview about the whole integrated circuit industry. This encyclopedia is designed as a reference book for scientists and engineers actively involved in integrated circuit research and development field. In addition, this book provides enough guide lines and knowledges to benefit enterprisers being interested in integrated circuit industry.
Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
This new book by M Levinshtein and G Simin tells the readers about the design and work of the most important and most interesting semiconductor devices ? the transistors.The book is written in a friendly and easy to read manner and is meant primarily for young people, high school students, freshmen and sophomores. However, the original approach to semiconductor physics makes this book attractive to physics teachers and professors as well.The book consists of 3 parts: Part I: The section on semiconductors describes the main properties of semiconductors, explains the difference between the semiconductors, metals and dielectrics. We find here the explanation of the appearance of those wonderful properties of semiconductors which underlie their numerous applications. This part also contains a vivid and detailed description of the main types of motion of the charge carriers in semiconductors: thermal motion, motion in the electric field and diffusion.Part II covers Barriers and Junctions. In order to understand the principles of the work of the most important semiconductor devices, it is not sufficient just to get to know the properties of semiconductors. It is also quite essential to study certain specific and interesting phenomena ? the so-called junctions. This part of the book contains a detailed and vivid description of those properties and in that view of the properties of the p-n junctions and diodes: photodiodes, varicaps, light emitting diodes, solar cells and rectifier diodes.Part III covers Transitors. It describes the basis of the work of the Bipolar and Field Effect Transistors. Without making use of rather complicated equations or notions of quantum mechanics the authors give a clear and simple explanation of the cause of ability of those devices to amplify and generate electric signals. They tell the readers how transistors are manufactured and describe the work of the transistor's simplest circuits.The last chapter of the book is devoted to the ideas underlying the transistors: integrated circuits. It is these integrated circuits which are the foundation of modern electronics: from telephone apparatus to supercomputers, from medical instruments to cosmic communication systems.In conclusion, the authors make an attempt to foresee and imagine, together with the reader what other devices may come to substitute the transistor in the future.
This book represents recent progress and development of the photodiodes including the fundamental reviews and the specific applications developed by the authors themselves. The key idea of this book is that it allows authors to deal with a wide range of backgrounds and research progresses in photodiode-related areas. With respect to the original collection of the book chapters, this book contains several improvements and new problems and related solutions are also discussed in the areas from fundamental physics and design to device and circuit applications. The book is intended for graduate students, engineers, and researchers who are especially interested in the area of optoelectronic device applications, including photodiodes, solar cells, CMOS image sensors, Optoelectronic Integrated Circuits, etc.
Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration. Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range of properties of MCT, and Part Three covers the various device types that have been developed using MCT. Each chapter opens with some historical background and theory before presenting current research. Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growth Liquid phase epitaxy (LPE) growth Metal-organic vapour phase epitaxy (MOVPE) Molecular beam epitaxy (MBE) Alternative substrates Mechanical, thermal and optical properties of MCT Defects, diffusion, doping and annealing Dry device processing Photoconductive and photovoltaic detectors Avalanche photodiode detectors Room-temperature IR detectors
Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume “Photodetectors” of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given.
