In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. - Condenses fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Control circuits are important parts of RF and microwave systems. Their compact size, high performance, and low cost have played a vital role in the development of cost effective solutions and new applications during the past quarter century. This book provides a comprehensive treatment of such circuits, including device operation and their models, basic circuit theory and designs, and applications. The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits and description of fabrication technologies. It provides you with a broad view of solid state control circuits including various technologies and their comparison and up to date information.
The 1982 statistics on the use of family planning and infertility services presented in this report are preliminary results from Cycle III of the National Survey of Family Growth (NSFG), conducted by the National Center for Health Statistics. Data were collected through personal interviews with a multistage area probability sample of 7969 women aged 15-44. A detailed series of questions was asked to obtain relatively complete estimates of the extent and type of family planning services received. Statistics on family planning services are limited to women who were able to conceive 3 years before the interview date. Overall, 79% of currently mrried nonsterile women reported using some type of family planning service during the previous 3 years. There were no statistically significant differences between white (79%), black (75%) or Hispanic (77%) wives, or between the 2 income groups. The 1982 survey questions were more comprehensive than those of earlier cycles of the survey. The annual rate of visits for family planning services in 1982 was 1077 visits /1000 women. Teenagers had the highest annual visit rate (1581/1000) of any age group for all sources of family planning services combined. Visit rates declined sharply with age from 1447 at ages 15-24 to 479 at ages 35-44. Similar declines with age also were found in the visit rates for white and black women separately. Nevertheless, the annual visit rate for black women (1334/1000) was significantly higher than that for white women (1033). The highest overall visit rate was for black women 15-19 years of age (1867/1000). Nearly 2/3 of all family planning visits were to private medical sources. Teenagers of all races had higher family planning service visit rates to clinics than to private medical sources, as did black women age 15-24. White women age 20 and older had higher visit rates to private medical services than to clinics. Never married women had higher visit rates to clinics than currently or formerly married women. Data were also collected in 1982 on use of medical services for infertility by women who had difficulty in conceiving or carrying a pregnancy to term. About 1 million ever married women had 1 or more infertility visits in the 12 months before the interview. During the 3 years before interview, about 1.9 million women had infertility visits. For all ever married women, as well as for white and black women separately, infertility services were more likely to be secured from private medical sources than from clinics. The survey design, reliability of the estimates and the terms used are explained in the technical notes.
A comprehensive treatment of the economic and global impacts of the advanced materials industry This book represents the first comprehensive investigation of the emerging international advanced materials industry and its profound impact on the world's industrialized and newly emerging economies. It examines the ways in which science, technology, business, and markets have converged to produce one of the most dynamic industries in recent years—one that is increasingly controlling global technological progress as a whole. From the unique vantage point of this crucial industry, this book illuminates the major differences in how the world's two economic superpowers—the United States and the European Union—perceive and carry forward the technology creation process and what these differences mean for achieving national and regional competitive advantage in the twenty-first century. It draws upon a rich body of source materials spanning from 1970 through 2007 as well as actual in-depth interviews and internal corporate and governmental documentation. The book is organized thematically, with each section highlighting critical perspectives on the rise of the international advanced materials industry and its impact on the relative competitiveness of the United States and the European Union. It concludes with a discussion of how what we have learned about advanced materials in the West tells us of the future competitive power of an emerging Asia. The Advanced Materials Revolution is essential reading for researchers, executives, and managers working in the advanced materials and related technological fields, as well as professionals and scholars in the academic, investment, consulting, and government communities. It also serves as a valuable case study textbook for advanced undergraduate and graduate courses in business, management, entrepreneurship, technology studies, chemical and materials engineering, economics, economic history, and regional and economic development.
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
