A new simple experimental set-up both for on-wafer and in-package electrical and electro-optic characterization of electro-optic devices up to 40 GHz is presented. The technique makes only use of a conventional network vector analyzer (NVA) and of a calibrated high-speed photodetector. The electro-optic transmission coefficient is simply deembedded from the electrical S21 using the detector calibrated responsivity. The RF calibration of the set-up implements the RSOL technique. The results obtained are shown to be comparable with the ones given by commercially available instrumentation, both in terms of accuracy and repeatability. The frequency bandwidth is only determined by the NVA bandwidth provided that the photodetector RF output is well above the NVA noise floor. Firstly some comparison with commercially available instrumentation up to 40 GHz on in-package device will be shown to validate the technique, after that, results concerning both in-package and on-wafer devices up to 40 GHz will be reported.
This book demonstrates the implementation of an automated measuring system for very efficient measurement of chromatic dispersion, which uses a modulation phase shift method over long haul of optical single mode fiber. The authors show how a new scheme for measuring chromatic dispersion is adopted in conjunction with a tunable laser (TLS), providing the optical power at required wavelength and digital oscilloscope (DOSC) for measuring the phase difference between microwave signals from transmitter and microwave signals at the receiver. This is a novel approach for real-time chromatic dispersion in optical systems such as optical fibers. The setup used is very simple, accurate and cost effective, compared to other methods such as direct measurement, differential mode delay, polarization mode dispersion measurement and phase delay method.
The increasing demand for more content, services, and security drives the development of high-speed wireless technologies, optical communication, automotive radar, imaging and sensing systems and many other mm-wave and THz applications. S-parameter measurement at mm-wave and sub-mm wave frequencies plays a crucial role in the modern IC design debug. Most importantly, however, is the step of device characterization for development and optimization of device model parameters for new technologies. Accurate characterization of the intrinsic device in its entire operation frequency range becomes extremely important and this task is very challenging. This book presents solutions for accurate mm-wave characterization of advanced semiconductor devices. It guides through the process of development, implementation and verification of the in-situ calibration methods optimized for high-performance silicon technologies. Technical topics discussed in the book include: Specifics of S-parameter measurements of planar structures Complete mathematical solution for lumped-standard based calibration methods, including the transfer Thru-Match-Reflect (TMR) algorithms Design guideline and examples for the on-wafer calibration standards realized in both advanced SiGe BiCMOS and RF CMOS processes Methods for verification of electrical characteristics of calibration standards and accuracy of the in-situ calibration results Comparison of the new technique vs. conventional approaches: the probe-tip calibration and the pad parasitic de-embedding for various device types, geometries and model parameters New aspects of the on-wafer RF measurements at mmWave frequency range and calibration assurance.
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
