Wire Bonding in Microelectronics

Wire Bonding in Microelectronics

Author: George Harman

Publisher: McGraw Hill Professional

Published: 2009-06-05

Total Pages: 448

ISBN-13: 007164265X

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The Industry Standard Guide to Wire Bonding--Fully Updated The definitive resource on the critical process of connecting semiconductors with their packages, Wire Bonding in Microelectronics, Third Edition, has been thoroughly revised to help you meet the challenges of today's small-scale and fine-pitch microelectronics. This authoritative guide covers every aspect of designing, manufacturing, and evaluating wire bonds engineered with cutting-edge techniques. In addition to gaining a full grasp of bonding technology, you'll learn how to create reliable bonds at exceedingly high yields, test wire bonds, solve common bonding problems, implement molecular cleaning methods, and much more. COVERAGE INCLUDES: Ultrasonic bonding systems and technologies, including high-frequency systems Bonding wire metallurgy and characteristics, including copper wire Wire bond testing Gold-aluminum intermetallic compounds and other interface reactions Gold and nickel-based bond pad plating materials and problems Cleaning to improve bondability and reliability Mechanical problems in wire bonding High-yield, fifine-pitch, specialized-looping, soft-substrate, and extremetemperature wire bonds Copper, low-dielectric-constant (Cu/Lo-k) technology and problems Wire bonding process modeling and simulation CD includes all the book's full-color figures plus animations


Effects of Ultrasound in Microelectronic Ultrasonic Wire Bonding

Effects of Ultrasound in Microelectronic Ultrasonic Wire Bonding

Author: Ivan Lum

Publisher:

Published: 2007

Total Pages: 150

ISBN-13: 9780494433072

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Ultrasonic wire bonding is the most utilized technique in forming electrical interconnections in microelectronics. However, there is a lacking in the fundamental understanding of the process. In order for there to be improvements in the process a better understanding of the process is required. The mechanism of the bond formation in ultrasonic wire bonding is not known. Although there have been theories proposed, inconsistencies have been shown to exist in them. One of the main inconsistencies is the contribution of ultrasound to the bonding process. A series of experiments to investigate the mechanism of bond formation are performed on a semi automatic wire bonder at room temperature. 25 [mu]m diameter Au wire is ball bonded and also 25 [mu]m diameter Al wire is wedge-wedge bonded onto polished Cu sheets of thickness 2 mm. It is found that a modified microslip theory can describe the evolution of bonding. With increasing ultrasonic power the bond contact transitions from microslip into gross sliding. The reciprocating tangential relative motion at the bond interface results in wear of surface contaminants which leads to clean metal/metal contact and bonding. The effect of superimposed ultrasound during deformation on the residual hardness of a bonded ball is systematically studied for the first time. An innovative bonding procedure with in-situ ball deformation and hardness measurement is developed using an ESEC WB3100 automatic ball bonder. 50 [mu]m diameter Au wire is bonded at various ultrasound levels onto Au metallized PCB substrate at room temperature. It is found that sufficient ultrasound which is applied during the deformation leads to a bonded ball which is softer than a ball with a similar amount of deformation without ultrasound. No hardening of the 100 [mu]m diameter Au ball is observed even with the maximum ultrasonic power capable of the equipment of 900 mW. In summary, the fundamental effect of ultrasound in the wire bonding process is the reciprocating tangential displacement at the bond interface resulting in contaminant dispersal and bonding. A second effect of ultrasound is the softening of the bonded material when compared to a similarly non-ultrasound deformed ball.


Ire Bonding in Microelectronics

Ire Bonding in Microelectronics

Author: George G. Harman

Publisher: McGraw Hill Professional

Published: 1997

Total Pages: 290

ISBN-13: 9780070326194

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The first edition of this work is considered a classic reference in the field. This new edition updates the entire work and adds 100 pages of information covering new materials and techniques such as fine pitch


WIRE BONDING IN MICROELECTRONICS, 3/E

WIRE BONDING IN MICROELECTRONICS, 3/E

Author: George Harman

Publisher: McGraw-Hill Education

Published: 2010-02-10

Total Pages: 446

ISBN-13: 9780071476232

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The Industry Standard Guide to Wire Bonding--Fully Updated The definitive resource on the critical process of connecting semiconductors with their packages. Wire Bonding in Microelectronics, Third Edition, has been thoroughly revised to help you meet the challenges of today's small-scale and fine-pitch microelectronics. This authoritative guide covers every aspect of designing, manufacturing, and evaluating wire bonds engineered with cutting-edge techniques. In addition to gaining a full grasp of bonding technology, you'll learn how to create reliable bonds at exceedingly high yields, test wire bonds, solve common bonding problems, implement molecular cleaning methods, and much more. COVERAGE INCLUDES: Ultrasonic bonding systems and technologies, including high-frequency systems Bonding wire metallurgy and characteristics, including copper wire Wire bond testing Gold-aluminum intermetallic compounds and other interface reactions Gold and nickel-based bond pad plating materials and problems Cleaning to improve bondability and reliability Mechanical problems in wire bonding High-yield, fine-pitch, specialized-looping, soft-substrate, and extreme-temperature wire bonds Copper, low-dielectric-constant (Cu/Lo-k) technology and problems Wire bonding process modeling and simulation CD includes all of the book's full-color figures plus animations.