Electronic Properties of Semiconductor Interfaces
Electronic Properties of Semiconductor Interfaces

Author: Winfried Mönch

Publisher: Springer Science & Business Media

Published: 2013-04-17

Total Pages: 269

ISBN-13: 3662069458

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Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Metal-Semiconductor Schottky Barrier Junctions and Their Applications
Metal-Semiconductor Schottky Barrier Junctions and Their Applications

Author: B.L. Sharma

Publisher: Springer Science & Business Media

Published: 2013-11-11

Total Pages: 379

ISBN-13: 146844655X

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The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.

Semiconductor Surfaces and Interfaces
Semiconductor Surfaces and Interfaces

Author: Winfried Mönch

Publisher: Springer Science & Business Media

Published: 2013-04-17

Total Pages: 455

ISBN-13: 3662031345

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Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-included surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, results of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.

Metal-semiconductor Contacts
Metal-semiconductor Contacts

Author: E. H. Rhoderick

Publisher: Oxford University Press, USA

Published: 1988

Total Pages: 252

ISBN-13: 9780198593355

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This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology.

Metallization and Metal-Semiconductor Interfaces
Metallization and Metal-Semiconductor Interfaces

Author: Inder P. Batra

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 501

ISBN-13: 1461307953

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This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.

Electrochemistry at Metal and Semiconductor Electrodes
Electrochemistry at Metal and Semiconductor Electrodes

Author: Norio Sato

Publisher: Elsevier

Published: 1998-10-09

Total Pages: 413

ISBN-13: 0080530737

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Electrochemisty at Metal and Semiconductor Electrodes covers the structure of the electrical double layer and charge transfer reactions across the electrode/electrolyte interface. The purpose of the book is to integrate modern electrochemistry and semiconductor physics, thereby, providing a quantitative basis for understanding electrochemistry at metal and semiconductor electrodes. Electrons and ions are the principal particles which play the main role in electrochemistry. This text, therefore, emphasizes the energy level concepts of electrons and ions rather than the phenomenological thermodynamic and kinetic concepts on which most of the classical electrochemistry texts are based. This rationalization of the phenomenological concepts in terms of the physics of semiconductors should enable readers to develop more atomistic and quantitative insights into processes that occur at electrodes. The book incorporates many traditional disciplines of science and engineering such as interfacial chemistry, biochemistry, enzyme chemistry, membrane chemistry, metallurgy, modification of solid interfaces, and materials' corrosion. The text is intended to serve as an introduction for the study of advanced electrochemistry at electrodes and is aimed towards graduates and senior undergraduates studying materials and interfacial chemistry or those beginning research work in the field of electrochemistry.

Metal-Dielectric Interfaces in Gigascale Electronics
Metal-Dielectric Interfaces in Gigascale Electronics

Author: Ming He

Publisher: Springer Science & Business Media

Published: 2012-02-02

Total Pages: 155

ISBN-13: 1461418127

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Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.

Semiconductor Interfaces And Microstructures
Semiconductor Interfaces And Microstructures

Author: Zhe Chuan Feng

Publisher: World Scientific

Published: 1992-08-31

Total Pages: 327

ISBN-13: 981450582X

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Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various experimental technologies and theoretical methods. This book provides an up-to-date review on these advances and includes the following major subjects: IV-IV, III-V and II-VI semiconductors and metal/semiconductor structures; new developments in growth methods; electric, optical, magnetic and structural characterization and properties; relative theories — electronic transport, phonos and interface modes; devices and applications. These materials are organized into four sections: General, III-V, II-VI and IV-IV, which offer comprehensive information and help readers in following the new developments in the research frontiers of the above fields.

Semiconductor Physical Electronics
Semiconductor Physical Electronics

Author: Sheng S. Li

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 514

ISBN-13: 146130489X

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The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.